Magnetic memory device

ABSTRACT

The present invention provides a magnetic memory device capable of providing high-speed access without increasing an array area. Gate word lines are respectively linearly disposed between source impurity regions and drain impurity regions within a memory cell array area. Gate word line protrusions are respectively provided at boundary regions of memory cell forming regions. Contacts relative to the gate word line protrusions are respectively provided at boundary regions of memory cells at adjacent columns. The drain impurity regions are respectively disposed with being shifted from the centers of the memory cell forming regions in such a manner that spaces between the drain impurity regions become large in the regions in which the protrusions are disposed.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2008-291250 filed onNov. 13, 2008 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a magnetic memory device, andparticularly to a configuration of an array of a magnetic memory devicecapable of implementing high-speed access without increasing an areaoccupied by a memory cell array.

As one of memory devices that store data therein on a non-volatilebasis, there is known an MRAM (magnetic random access memory). The MRAMmakes use of a variable magnetoresistive element for data storage. Thevariable magnetoresistive element has a TMR (tunneling magnetoresistive)element or an MTJ (magnetic tunneling junction) element. In eitherconfiguration, the variable magnetoresistive element has a fixed layerin which its direction of magnetization is fixed regardless of storeddata, a free layer in which the direction of magnetization is setaccording to the stored data, and a barrier layer provided between thefixed layer and the free layer. When the free layer and the fixed layercoincide in magnetization direction with each other, an electricalresistance relative to the current that passes through the variablemagnetoresistive element is small. On the other hand, when the freelayer and the fixed layer are opposite in the magnetization direction,the electrical resistance becomes large. The magnitude of thisresistance value is associated with data “0” and “1”.

The MRAM cell uses a data storage magneto-resistive effect. Thus, it isdifferent from such a configuration that an electrical charge is storedin a floating gate or an insulating film as in a flash memory. Thereexists no limitation to the number of rewritings due to deterioration ofan interlayer insulating film and the like. It is not necessary toperform the storage of an electrical charge into a charge storage layer(or insulating film) or its discharge upon data storage. The setting ofa magnetization direction is simply performed. Since this magnetizationinversion occurs in a short time, the writing of data can be performedat high speed.

When a processing system is built using such an MRAM, the MRAM needs toobtain high-speed access and reduce a layout area in terms ofspeeding-up of the whole system and its size reduction. In built-inapplications such as SOC (System On Chip) in particular, there is astrong demand for a reduction in the layout area along with high-speedaccess.

A configuration for achieving a reduction in the layout area of a memoryarray for MRAM has been disclosed in a patent document 1 (JapaneseUnexamined Patent Publication No. 2007-317948). In the configurationdisclosed in the patent document 1, each MRAM cell comprises a seriesbody of a magnetic memory transistor and a selection transistor. Asource line for the selection transistor of each MRAM cell is shared byselection transistors of each adjacent row. A reduction in the layoutarea of each cell is achieved by sharing the source line between theadjacent cells.

A patent document 2 (Japanese Unexamined Patent Publication No.2005-311132) discloses a configuration which achieves a reduction invariations in magnetic field at the writing of data into each MRAM cell.Namely, in the configuration disclosed in the patent document 2,selection transistors are disposed mirror-symmetrically so as to share asource line. On the other hand, upper wirings coupled to variablemagnetoresistive elements are provided translation-symmetrically. Withthe translational symmetry, wirings lying above the selectiontransistors are disposed in a high density. Thus, the variablemagnetoresistive elements are disposed at equal intervals and theproximity effect of the magnetic field is made uniform with respect toeach variable magnetoresistive element, thereby reducing the variationsin the magnetic field at the data writing.

A configuration for achieving the avoidance of crosstalk between wiringslaid out in a high density has been disclosed in a patent document 3(Japanese Unexamined Patent Publication No. 2002-270790). Also in theconfiguration shown in the patent document 3, selection transistors ofMRAM cells are disposed mirror-symmetrically, and upper wirings relativeto variable magnetoresistive elements are disposedtranslation-symmetrically. In the patent document 3, electrical currentis caused to flow into a write word line adjacent to a selected row inthe direction opposite to the write word line at the selected row uponthe data writing, thereby avoiding miswriting to each adjacent cell.

A patent document 4 (Japanese Unexamined Patent Publication No.2005-108973) has disclosed a configuration for achieving a reduction incrosstalk between wirings of a core/peripheral circuit section at anMRAM using TMR elements. In the configuration shown in the patentdocument 4, components for core/peripheral circuits and a memory arrayare formed by the same process. As to memory cells, upper wirings havetranslational symmetry and selection transistors are disposedmirror-symmetrically. In the core/peripheral circuit section, crosstalkwhere a dummy of the TMR element is disposed and a bit line and a writeword line are disposed close to each other can be avoided by the dummyTMR element.

A configuration of a spin injection MRAM using spin injection in theMRAM has been disclosed in a patent document 5 (Japanese UnexaminedPatent Publication No. 2006-54046) and a patent document 6 (JapaneseUnexamined Patent Publication No. 2007-311514). The spin injection MRAMcauses a write current to flow through a variable magnetoresistiveelement in the direction corresponding to the logical value of writedata. The direction of magnetization of a free layer is set according toa spin deflection direction of the write current. Also in theconfiguration shown in the patent document 5, selection transistors ofadjacent MRAM cells share a source region therefor and are disposedmirror-symmetrically.

In the patent document 6, the variable magnetoresistive element makesuse of an N channel MOS transistor (insulated gate field effecttransistor) or a P channel MOS transistor as a selection transistordepending on its coupling mode so as to suppress the influence of thethreshold voltage of each selection transistor upon data writing. As toa write current, a write current at the time that rewriting is performedin a magnetizing anti-parallel direction is larger than a currentrequired upon writing to a magnetizing parallel state. Upon thiswriting, the write current is caused to flow at source ground to therebyallow a large current to flow. Upon reading, the current is caused toflow in the same direction as upon writing to the anti-parallel state,thereby allowing a large current to flow upon the reading.

SUMMARY OF THE INVENTION

In order to read data at high speed, there is a need to set a selectiontransistor of each MRAM cell to a conducting state as rapidly aspossible. The gates of selection transistors of many MRAM cells arecoupled to a word line and load capacitances (parasitic capacitances)thereof are large. A so-called word line Piling structure is normallyused in a DRAM (Dynamic Random Access Memory) and gate wirings ofselection transistors are electrically coupled to their correspondingupper metal wirings low in resistance at predetermined intervals. In thecase of the normal DRAM, however, word line piling regions thereof areprovided in regions or the like free of provision of memory cells, forexample, between memory blocks, and so-called word line shut regions arerequired additionally. Therefore, if the word line piling structure ofthe DRAM is applied to the MRAM as it is, it is then difficult to reducethe layout area of a memory cell array.

Although the configuration for laying out the MRAM cells in the highdensity has been shown in the patent documents 1 through 6, the wordline piling structure is not shown therein.

Upon data reading of each MRAM cell, the current is caused to flowbetween the bit line and the source line via the MRAM cell. The sourceline is normally comprised of a diffusion layer (impurity layer) and ametal wiring. The reading of data is performed by detecting the currentthat flows through the bit line or the source line. Thus, in order toread the data accurately and at high speed, there is a need to set theresistance of the source line as small as possible (this is done toprevent the floating-up or rising of a ground potential due to thecurrent of the source line or to cause a large current to flow where thesource line is grounded).

Although such a configuration that the source line (inclusive ofdiffusion layer and metal wiring) is shared between the adjacent MRAMcells is shown in the configurations shown in the patent documents 1through 6, such a configuration that the resistance of the source lineis further reduced is not shown therein. A problem arises in that whenthe width of a metal source wiring is simply made broad for the purposeof a reduction in the resistance, the area of each MRAM cell alsoincreases so that the layout area of each MRAM cell cannot be reduced.

The reduction in the number of the source-line wirings and theconfiguration realized by sharing the source line by the adjacent MRAMcells are merely shown in the patent documents 1 through 6. Such aconfiguration that the resistance of the source line is further reducedwithout increasing the layout area of each MRAM cell is not shown.

Upon data reading, the reading of data stored in each selected MRAM cellis done by comparing the current flowing via the MRAM cell with thecurrent flowing through a dummy cell in which its data stored value isfixed. In this case, there is a need to accurately generate a referencecurrent with respect to the data stored in the MRAM cell for the purposeof performing the reading of data accurately.

As dummy cells (reference cells) for generating reference currents, areference cell placed in a high resistance state and a reference cellplaced in a low resistance state are generally used in each MRAM. Theaverage current of currents flowing through these two reference cells isgenerated and utilized as the reference current. When the resistancevalue of the reference cell is shifted to the high or low resistanceside in this case, the magnitude of the reference current also changescorrespondingly. Thus, the reference current cannot be generatedaccurately and the reading of data cannot be performed accurately andwith quick timing, based on the difference between the current flowingthrough the MRAM cell and the current flowing through the referencecell.

Each of the patent documents 1 through 6 discloses no influence of avariation in the resistance value of such a reference cell.

Shape dummy cells are arranged in an array periphery to accuratelyperform the patterning of an array 2 with MRAM cells disposed thereinand the MRAM cells. Also in the configuration shown in the patentdocument 2, such a configuration that dummy patterns (same patterns asTMR elements) are disposed at the outer periphery of the MRAM cell arrayis shown. The patent document 2, however, merely shows such aconfiguration that the dummy patterns are used to prevent pattern shiftsin the MRAM cells in a photolithography process. Such a configurationthat the area of a region in which each dummy pattern is disposed isreduced and the area of a memory cell array is reduced is not shown inthe patent document 2.

An object of the present invention is therefore to provide a magneticmemory device capable of implementing high-speed access withoutincreasing the area of an array with MRAM cells disposed therein.

There is provided a magnetic memory device according to the presentinvention as one embodiment, wherein a selection transistor of each MRAMcell has first and second impurity regions disposed opposite to theircorresponding word lines. The distances between the first impurityregions of the MRAM cells arranged in a row direction are made differentfrom one another with respect to first and second adjacent MRAM cellsadjacent in an opposite direction as viewed in the row direction.Namely, a first distance L1 to the first impurity region of the firstadjacent MRAM cell is set longer than a second distance L2 to the firstimpurity region of the second adjacent MRAM cell.

There is provided a magnetic memory device according to the presentinvention as another embodiment, wherein a shape dummy area in whichshape dummy cells for accurately performing the patterning of MRAM cellsare disposed, is provided at an outer periphery of a memory array. Theshape dummy area has a first shape dummy area in which first shape dummycells of the same structure as the MRAM cells, each having an MRAM cell,a variable magnetoresistive element and a selection transistor aredisposed, a second shape dummy area which is disposed outside the firstshape dummy area and in which a second shape dummy cell having avariable magnetoresistive element is disposed, and a third shape dummyarea in which a third shape dummy cell having a dummy element of thesame structure as the variable magnetoresistive element in like manneris disposed. In the second shape dummy area, an element for applying abias to a substrate region of the memory array is disposed below itsdummy element. In the third shape dummy area, a transistor of aperipheral circuit for controlling access to each MRAM cell of thememory array is disposed below the third shape dummy cell.

There is provided a magnetic memory device according to the presentinvention as a further embodiment, wherein dummy cells (reference cells)for generating reference currents at data reading of selected MRAM cellsare disposed in the center of an MRAM cell array in alignment with MRAMcells.

Spaces along a row direction between first impurity regions are madedifferent from each other thereby to make it possible to dispose pilingregions for word lines efficiently and sufficiently ensure the distancebetween each of contacts for the piling regions and each of contacts forthe first impurity regions. Thus, the word line piling regions aredisposed with sufficient margins to thereby make it possible to realizea word line piling structure. Since the layout area of each memory celldoes not increase, each word line can be brought to a reduction in theresistance sufficiently without increasing the area occupied by a memorycell array. Source wirings can be disposed in a column direction withsufficient widths. Thus, mesh-structured source lines can be realizedand the resistance of each source line can be reduced.

Dummy areas are provided at the outer periphery of the memory cellarray, and dummy cells different in configuration from one another aredisposed in the first through third shape dummy areas. Consequently, thepatterning of each MRAM cell is performed accurately and variations ofvariable magnetoresistive elements can be reduced. Further, peripheralcircuit elements can be laid out efficiently by the second and thirddummy areas. Thus, an increase in the layout area of this memory devicecan be suppressed.

Disposing reference cells in the center of the memory cell array makesit possible to reduce variations in the resistance value of a variablemagnetoresistive element of each reference cell, generate a referencecurrent accurately and implement accurate and high-speed data reading.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically showing an overall configuration of anMRAM according to a first embodiment of the present invention;

FIG. 2 is a diagram illustrating one example of configurations of memorysubarrays shown in FIG. 1;

FIG. 3 is a diagram more concretely showing configurations of the memorysubarrays and sense amplifier circuit shown in FIG. 2;

FIG. 4 is a diagram schematically illustrating a plane layout of amemory subarray according to the first embodiment of the presentinvention;

FIG. 5 is a diagram schematically showing a sectional structure takenalong line V-V shown in FIG. 4;

FIG. 6 is a diagram schematically depicting a sectional structure takenalong line VI-VI shown in FIG. 4;

FIG. 7 is a diagram schematically showing a sectional structure takenalong line VII-VII shown in FIG. 4;

FIG. 8(A) shows a sectional structure taken when a memory cell structureis seen in a drain region direction along line IIXA-IIXA shown in FIG.4, FIG. 8(B) shows a sectional structure taken when a memory cellstructure is seen in the drain region direction along line IIXB-IIXBshown in FIG. 4, and FIG. 8(C) shows a sectional structure taken when amemory cell structure is seen in a drain region direction along lineIIXC-IIXC shown in FIG. 4;

FIG. 9 is a diagram schematically illustrating a layout of upper layerwirings in the plane layout shown in FIG. 4;

FIG. 10 is a diagram schematically showing a layout of wirings for upperlayers in the plane layout shown in FIG. 9;

FIG. 11 is a diagram schematically illustrating a sectional structuretaken along line XI-XI shown in FIG. 10;

FIG. 12 is a diagram schematically showing a sectional structure takenalong line XII-XII shown in FIG. 10;

FIG. 13 is a diagram schematically depicting a sectional structure takenalong line XIII-XIII shown in FIG. 10;

FIG. 14(A) shows a sectional structure taken when a memory cellstructure is seen in a drain region direction along line XIVA-XIVA shownin FIG. 10, and FIG. 14(B) is a diagram schematically showing asectional structure taken when a memory structure is seen in the drainregion direction along line XIVB-XIVB shown in FIG. 10;

FIG. 15 is a diagram schematically showing a layout of upper layerwirings in the plane layout shown in FIG. 10;

FIG. 16 is a diagram schematically illustrating a layout of more upperlayer wirings in the plane layout shown in FIG. 15;

FIG. 17 is a diagram schematically showing a sectional structure takenalong line A17-A17 shown in FIG. 16;

FIG. 18 is a diagram schematically showing a sectional structure takenalong line A18-A18 shown in FIG. 16;

FIG. 19 is a diagram schematically showing a sectional structure takenalong line A19-A19 shown in FIG. 16;

FIG. 20 is a diagram schematically illustrating a layout of uppervariable magnetoresistive elements in the plane layout shown in FIG. 16;

FIG. 21 is a diagram schematically showing a layout of upper fifth metalwirings in the plane layout shown in FIG. 20 together with the layout ofthe variable magnetoresistive elements;

FIG. 22 is a diagram schematically illustrating a sectional structuretaken along line A22-A22 shown in FIG. 21;

FIG. 23 is a diagram schematically showing a sectional structure takenalong line A23-A23 shown in FIG. 21;

FIG. 24 is a diagram schematically depicting a sectional structure takenalong line A24-A24 shown in FIG. 21;

FIG. 25 is a diagram schematically showing a fragmentary configurationof a modification of a second embodiment of the present invention;

FIG. 26 is a diagram schematically illustrating a sectional structure ofan MRAM according to the second embodiment of the present invention;

FIG. 27 is a diagram schematically depicting a configuration of amodification of the second embodiment of the present invention;

FIG. 28 is a diagram schematically showing a memory cell area of an MRAMaccording to a third embodiment of the present invention;

FIG. 29 is a diagram schematically illustrating a layout of a memorysubarray of an MRAM according to a fourth embodiment of the presentinvention;

FIG. 30 is a diagram concretely showing a second shape dummy area shownin FIG. 29; and

FIG. 31 is a diagram schematically illustrating a layout of a thirdshape dummy area shown in FIG. 29 and its peripheral circuits.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIG. 1 is a diagram schematically showing an overall configuration of anon-volatile semiconductor memory device (MRAM) according to a firstembodiment of the present invention. In FIG. 1, the non-volatilesemiconductor memory device (hereinafter called “MRAM”) 1 is formed overa semiconductor chip (substrate) and includes a plurality of memorysubarrays 2 a through 2 h. The memory subarrays 2 a through 2 h arearranged in line in a Y direction, and the memory subarrays 2 e through2 h are arranged in line along the Y direction. In these memorysubarrays 2 a through 2 h, MRAM cells are arranged in matrix form.

Column selection drive circuits 3 aa, 3 ab through 3 ha and 3 hb areprovided on both sides extending along the Y direction, of the memorysubarrays 2 a through 2 h respectively. Each of the column selectiondrive circuits 3 aa, 3 ab through 3 ha and 3 hb includes a columndecoder which generates a column selection signal for selecting a columnin accordance with an address signal, and a bit line drive circuit whichcauses a write current to flow through a bit line in the directioncorresponding to write data upon data writing.

Sense amplifier circuits 4 a through 4 b are provided in common to thetwo memory subarrays adjacent to each other along the Y direction.Namely, the sense amplifier circuit 4 a is provided in common to thememory subarrays 2 a and 2 b, and the sense amplifier circuit 4 b isprovided in common to the memory subarrays 2 c and 2 d. The senseamplifier circuit 4 c is provided in common to the memory subarrays 2 eand 2 f, and the sense amplifier circuit 4 d is provided in common tothe memory subarrays 2 g and 2 h.

The MRAM 1 makes use of a so-called open bit-line system. An MRAM cellis selected at one memory subarray, and a reference cell is selected atthe paired memory subarrays (subarrays that share the sense amplifiercircuit). The corresponding sense amplifier circuit compares a currentthat flows through the selected MRAM cell with a reference current thatflows through the reference cell and performs reading of data inaccordance with the result of comparison.

A row selection drive circuit 5 is provided in a central region definedbetween the memory subarrays 2 a through 2 d and the subarrays 2 ethrough 2 h in common to the memory subarrays 2 a through 2 h. The rowselection drive circuit 5 includes a decoder for selecting a word lineand a digit line, a word line driver for driving each selected word lineupon data reading, and a digit line driver for driving each selecteddigit line upon data writing. The row selection drive circuit 5 drives adigit line of a selected row to a selected state upon data writing atthe selected memory subarray and drives a word line of the selected rowto a selected state upon data reading.

An input/output circuit 6 a is provided in common to the memorysubarrays 2 a through 2 d arranged in the Y direction. An input/outputcircuit 6 b is provided in common to the memory subarrays 2 a through 2h. Each of the input/output circuits 6 a and 6 b includes a data writecircuit and a data read circuit and executes the generation of internalwrite data and the generation of data read to the outside.

A control circuit 7 is provided between the input/output circuits 6 aand 6 b. The control circuit 7 performs internal operation controlnecessary to execute a specified operation, in accordance with anoperation mode instruction (command) given or supplied from outside. Anaddress input circuit which inputs an address signal therein, may beincluded in the control circuit 7 or provided in each of theinput/output circuits 6 a and 6 b. The specification of each memorysubarray and the specification of each memory cell in the correspondingsubarray are performed in accordance with the address signal.

FIG. 2 is a diagram schematically showing one example of configurationsof the memory subarrays and sense amplifier circuit shown in FIG. 1.Since the memory subarrays 2 a through 2 h and the sense amplifiercircuits 4 a through 4 d shown in FIG. 1 are identical in configurationto one another, the configurations of the memory subarrays 2 a and 2 band the sense amplifier circuit 4 a are typically illustrated in FIG. 2.For simplification of drawings, the column selection drive circuits 3 aaand 3 ab, and 3 ba and 3 bb respectively provided with respect to thememory subarrays 2 a and 2 b are not shown in FIG. 2.

In FIG. 2, memory cells (MRAM cells) MC are arranged in matrix form inthe memory subarray 2 a, and memory cells (MRAM cells) MC are arrangedin matrix form also in the memory subarray 2 b. Each of the memory cellsMC includes a series body of a variable magnetoresistive element VR anda selection transistor (access transistor) ATR. The variablemagnetoresistive element VR may be a TMR element or an MTJ element.

In the memory subarray 2 a, digit lines DL0_W through DLn_W and wordlines WL0_W through WLn_W are respectively provided corresponding to therespective rows of the memory cells MC. Bit lines BL0_W through BLn_Ware respectively provided corresponding to memory cell columns. Thedigit lines DL0_W through DLn_W are magnetically coupled to the variablemagnetoresistive elements VR of the memory cells of their correspondingrows. The word lines WL0_W through WLn_W are respectively coupled to thegates of the access transistors of the memory cells of theircorresponding rows.

Each of the word lines WL0_W through WLn_W comprises a gate word line 10a comprised of polysilicon and a metal word line 10 b formed of a metalwiring disposed parallel to its upper layer. The gate word line 10 a andthe metal word line 10 b are electrically coupled to each other by aword line shunt line 11 every four bits of each memory cell MC. In FIG.2, the word line shunt line 11 is shown so as to be disposed withrespect to each memory cell. The word lines WL0_W through WLn_W arebrought to a hierarchical structure of the gate word lines 10 arelatively high in resistance and the metal word lines 10 b low inresistance, whereby the resistance of the gate of each access transistoris reduced and high-speed access is realized. Disposing each word lineshunt line 11 in a memory cell forming region eliminates the need toprovide a word line shunt forming region additionally and suppresses anincrease in array area.

Source regions of the access transistors ATR of the two memory cellsadjacent in the Y direction are coupled to a source diffusion wiring 12a in common. The source diffusion wiring 12 a is electrically coupled toa metal source line 12 b configured in an impurity region and comprisedof a metal wiring extending continuously in the Y direction by means ofa source contact 13. Each of the source lines SL0_W through SLn_W has ahierarchical structure of an impurity region and a metal wiring and isthereby reduced in source line resistance. Since the source diffusionwiring (impurity region) 12 a is provided in common to the sourceregions of the access transistors of the memory cells lying in thecolumns adjacent to each other, the layout area of the source wiring ofeach access transistor can be reduced. The source lines SL0_W throughSLn_W are arranged in row and column directions, and the metal sourcelines 12 b and source diffusion wirings 12 a are electrically coupled toone another at predetermined intervals. These are further coupled totheir corresponding ground nodes. It is therefore possible to realize amesh-like source wiring structure and assuredly suppress a reduction inthe resistance of each source line and a variation in the potentialthereof.

In a manner similar to the memory subarray 2 a in the case of the memorysubarray 2 b, digit lines DL0_E through DLn_E and word lines WL0_Gthrough WLn_G are provided corresponding to the respective rows of thememory cells MC. Bit lines BL0_E through BLn_E are respectively providedcorresponding to memory cell columns. Source lines SL0_E through SLn_Eare provided similarly.

The memory subarrays 2 a and 2 b are respectively provided with dummycell areas or regions 15W and 15E in their central regions extending inthe Y direction. Reference cells are disposed in the dummy cell areas15W and 15E in alignment with the memory cell columns. Each of thereference cells has the same structure as the memory cell MC and storesfixed data therein. Upon data reading, the reference cell generates areference current relative to a cell current that flows through eachselected memory cell. The layout of the reference cells will beexplained in detail later together with the mode of connection to eachsense amplifier.

The sense amplifier circuit 4 a is provided with sense amplifiers SA0through SAk. The sense amplifiers SA0 through SAk are respectivelyprovided every predetermined number of bit lines and realize parallelreading in plural bits.

Disposing the dummy cell areas 15W and 15E in the central regions in theY direction, of the memory subarrays 2 a and 2 b makes it possible tosuppress variations in the resistance value of the variablemagnetoresistive element included in each reference cell and generate areference current stably (the variations in the resistance value of eachreference cell will also be described in detail later) as compared withwhere dummy cells are disposed in peripheral regions.

FIG. 3 is a diagram more concretely showing configurations of the senseamplifier circuit 4 a and the memory subarrays 2 a and 2 b shown in FIG.2. Configurations of parts related to the sense amplifiers SA0 and SA1contained in the sense amplifier circuit 4 a are typically shown in FIG.3.

In the memory subarray 2 a, bit lines BLa_W, . . . , BLb_W arerespectively disposed corresponding to the memory cell columns. A memorycell MCa and a reference cell DMCa are coupled to the bit line BLa_W. Amemory cell MCb and a reference cell DMCb are coupled to the bit lineBLb_W. The reference cell DMCa is placed in a high resistance state andhas a resistance value Rmax. The reference cell DMCb is placed in a lowresistance state and has a resistance value Rmin.

In the memory cells MCa and MCb, their resistance values are setcorresponding to the stored data. A word line WLaW is disposed withrespect to the memory cells MCa and MCb, and a dummy word line DWLaW isdisposed with respect to the reference cells DMCa and DMCb. These wordline WLaW and dummy word line DWLaW are respectively driven by a wordline (WL) driver WLDW and a dummy word line driver (DWL driver) DWLDW.

Bit line (BL) drivers BDVWa1 and BDVWar are provided at both ends of thebit line BLa_W. Bit line (BL) drivers BDVWb1 and BDVWbr are provided atboth ends of the bit line BLb_W. These bit line drivers BDVWa1, BDVWar,BDVWb1 and BDVWbr respectively cause write currents to flow throughtheir corresponding bit lines depending on write data. The direction ofeach of the bit line write currents is set according to the logicalvalue of the write data.

The bit lines BLa_W and BLb_W are respectively coupled to internal readdata lines RDBW0 and RDBW1 via read gates RGWa and RGWb. These readgates RGWa and RGWb are selectively brought into conduction inaccordance with a read column selection signal RCSLi. The read columnselection signal RCSLi is commonly given to the read gates provided fora plurality of bit lines because of plural-bit parallel reading. Theinternal read data lines RDBW0 and RDBW1 are respectively provided witha plurality of read gates. At one of the corresponding plural pairs ofread gates, one bit line is selected by the corresponding read columnselection signal RCSL (RCSLi: where i is set according to the number ofbit lines contained in one pair of bit lines).

Switch circuits SWW0 and SWW1 are respectively provided between theinternal read data lines RDBW0 and RDBW1 and the sense amplifiers SA0and SA1. These switch circuits SWW0 and SWW1 couple the internal readdata lines RDBW0 and RDBW1 to either of positive inputs (+) and negativeinputs (−) of their corresponding sense amplifiers SA0 and SA1 inaccordance with a read block selection signal RBSW.

Likewise also in the case of the memory subarray 2 b, memory cells MCaand MCb and reference cells DMCa and DMCb are provided. The memory cellMCa and the reference cell DMCa are coupled to a bit line BLa_E, and thememory cell MCb and the reference cell DMCb are coupled to a bit lineBLb_E. The memory cells MCa and MCb are coupled to a word line WLaE, andthe reference cells DMCa and DMCb are coupled to a dummy word lineDWLaE. These word line WLaE and dummy word line DWLaE are respectivelydriven to a selected state by a word line (WL) driver WLDE and a dummyword line driver (DWL driver) DWLDE.

Bit line drivers BDVEa1 and BDVEb1 and bit line drivers BDVEar andBDVEbr are provided on both sides of the bit lines BLa_E and BLb_E.

The bit lines BLa_E and BLb_E are respectively coupled to internal readdata lines RDBE0 and RDBE1 via read gates RGEa and RGEb. The read gatesRGEa and RGEb are also selectively brought into conduction in accordancewith a read column selection signal RCSLi.

Switch circuits SWE0 and SWE1 are provided for the internal read datalines RDBE0 and RDBE1. The switch circuit SWE0 couples the internal readdata line RDBE0 to one of the positive and negative inputs of the senseamplifier SA0 in accordance with a read block selection signal RBSE. Theswitch circuit SWE1 couples the internal read data line RDBE1 to one ofthe positive and negative inputs of the sense amplifier SA1 inaccordance with the read block selection signal RBSE.

At these memory subarrays 2 a and 2 b, their reference cells aredisposed in the central dummy cell areas 15W and 15E. The resistancevalue of each reference cell is set accurately.

Upon the data reading, the corresponding memory cells MC are selected atone of the memory subarrays 2 a and 2 b. Now assume where the memorycells MCa and MCb are selected at the memory subarray 2 a. In this case,the dummy word line WLaE is driven to the selected state at the memorysubarray 2 b and hence the reference cells DMCa and DMCb are selected.The read gates RGWa and RGWb and RGEa and RGEb are brought intoconduction in accordance with the read block selection signals RBSW andRBSE, so that the bit lines BLa_W and BLb_W are respectively coupled tothe switch circuits SWW0 and SWW1, and the bit lines BLa_E and BLb_E arerespectively coupled to the switch circuits SWE0 and SWE1.

Since the memory cells MCa and MCb of the memory subarray 2 a areselected, the internal read data lines RDBW0 and RDBW1 are respectivelycoupled to the positive inputs of the sense amplifiers SA0 and SA1 viathe switch circuits SWW0 and SWW1 in accordance with the read blockselection signal RBSW. On the other hand, the switch circuits SWE0 andSWE1 respectively couple the internal read data lines RDBE0 and RDBE1 tothe negative inputs of the sense amplifiers SA0 and SA1 in accordancewith the read block selection signal RBSE. The negative inputs of thesesense amplifiers SA0 and SA1 are coupled in common. Thus, the referencecells DMCa and DMCb are respectively supplied with read currents fromthe sense amplifiers SA0 and SA1 via the internal read data lines RDBE0and RDBE1. Reference cell currents I (Rmax) and I (Rmin) flow throughthese reference cells DMCa and DMCb respectively.

Since the reference cells DMCa and DMCb are respectively supplied withthe currents from both of the sense amplifiers SA0 and SA1, the currentsupplied from the negative input of each of the sense amplifiers SA0 andSA1 corresponds to an average value of the reference cell currents I(Rmax) and I (Rmin), i.e., (I (Rmax)+I (Rmin))/2. On the other hand, thecell current of the memory cell MCa flows through the bit line BLa_W.Similarly, the cell current corresponding to the stored data of thememory cell MCb flows through the internal read data line RDBW1 and thebit line BLb_W. These memory cells MCa and MCb are respectively placedin a high or low resistance state depending on the stored data. Thestored data of the memory cells MCa and MCb are read by referring to theaverage of the cell current I (Rmax) placed in the high resistance stateand the cell current I (Rmin) placed in the low resistance value, bothof which flow into the negative inputs of the sense amplifiers SA0 andSA1, thereby generating internal read data DQ<0> and DQ<1>. Namely, theaverage current and each cell current are differential-amplified togenerate the internal read data.

In this case, there is a need to accurately set the resistance values ofthe reference cells DMCa and DMCb to resistance values corresponding tothe high resistance state and the low resistance state respectively witha view toward reading accurate data and ensuring a sufficient readmargin. Disposing these reference cells DMCa and DMCb in the centralparts of the memory subarrays 2 a and 2 b makes it possible to suppressthe influence of shifts at patterning where they are disposed in anarray peripheral portion and to generate an accurate reference currentto perform the reading of data.

At the memory subarrays 2 a and 2 b, the source lines SL arerespectively provided in common to the memory cells MCa and MCb. Thesource lines SL assume such a configuration that they are disposed inso-called mesh form. The floating-up or rising of potential of thesource line SL where each of the memory cell current and the referencecell current flows can hence be suppressed, and accurate currentdetection can be performed.

FIG. 4 is a diagram schematically showing a plane layout of memory cellsof a memory subarray. Since the memory cells and reference cells havethe same layout in the memory subarray, a plane layout of memory cellsarranged in 4 rows and 4 columns is simply schematically shown in FIG.4. The memory subarray is configured by repeatedly disposing the memorycells arranged in 4 rows and 4 columns shown in FIG. 4 in the X and Ydirections.

Memory cell forming regions 20 are respectively assigned to the memorycells and the reference cells. The memory cell forming region 20 has apitch PTx along the X direction and a pitch Pty along the Y direction. Aone-bit memory cell is formed in the corresponding memory cell formingregion 20. In FIG. 4, the pitches PTx and Pty of the memory cell formingregion 20 are shown to be approximately equal to each other.

Active regions (impurity regions) 30 a and 30 b are respectively formedso as to extend continuously in the X direction. The active regions 30 aand 30 b configure source diffusion wirings (impurity regions) and areprovided in common to the memory cells arranged in two rows. At therespective memory cell forming regions, drain impurity regions 31 a, 31b, 31 c and 31 d are disposed opposite to the source impurity regions 30a and 30 b with respect to the Y direction with being shifted from thecentral positions of the memory cell forming regions 20 with respect tothe X direction. The drain impurity regions 31 a and 31 b are disposedmirror-symmetrically with respect to the boundaries of the memory cellforming regions as viewed in the X direction. Similarly, the drainimpurity regions 31 c and 31 d are also disposed mirror-symmetricallywith respect to the boundary regions between the memory cell formingregions as viewed in the X direction. Likewise, the drain impurityregions 31 a and 31 c are disposed mirror-symmetrically with respect tothe boundary regions between the memory cell forming regions also in theY direction. Similarly as well, the drain impurity regions 31 b and 31 dare also disposed mirror-symmetrically with respect to the boundaryregions therebetween.

A gate word line 32 a comprised of, for example, polysilicon is disposedin a region between the source impurity region 30 a and the drainimpurity regions 31 a and 31 b so as to extend continuously in the Xdirection. A gate word line 32 b is disposed between the source impurityregion 30 a and the drain impurity regions 31 c and 31 d so as to extendcontinuously in the X direction. Similarly, also as to the sourceimpurity region 30 b, gate word lines 32 c and 32 d, which extendcontinuously in the X direction, are disposed on both sides thereof.

The gate word lines 32 a, 32 b, 32 c and 32 d respectively have, atpredetermined intervals as viewed in the X direction, protrusions 33 a,33 b, 33 c and 33 d each of which extends to the boundary of the memorycell forming region 20 in the Y direction. The protrusions 33 a, 33 b,33 c and 33 d are disposed every 4-bit memory cells in the X direction.The gate word lines (gate word lines 32 a and 32 b, for example)adjacent in the Y direction are disposed with being shifted by thememory cells of 2 bits.

The protrusions 33 a and 33 b of the gate word lines 32 a and 32 bprovided with respect to the same source impurity region 30 a aredisposed in the directions opposite to each other. The protrusions 33 cand 33 d provided with respect to the gate word lines 32 c and 32 d ofthe source impurity region 30 b are also disposed in the oppositedirection. The protrusions 33 a and 33 c of the gate word lines 32 a and32 c provided every other line in the gate word lines are provided atthe same position. The protrusions 33 b and 33 d are provided at thesame position as viewed in the X direction. By placing the protrusions33 b and 33 d in different positions in the X direction, the word lineprotrusions can be disposed with sufficient margins.

Source contacts 36 a and 36 b are respectively provided in the sourceimpurity regions 30 a and 30 b. The source contacts 36 a and 36 b arerespectively disposed every 2-bit memory cells in the X direction. Draincontacts 35 a, 35 b, 35 c and 35 d are respectively provided also in thedrain impurity regions 31 a through 31 d. The drain contacts 35 athrough 35 d are disposed mirror-symmetrically in the X and Y directionswith respect to the boundary regions of the memory cell forming regions.The protrusions 33 a through 33 d are respectively provided with shuntcontacts 34. Each of the protrusions 33 a through 33 d is electricallycoupled to an upper layer metal wiring to be described later via theshunt contact 34. The shunt contact 34 configures part of each shuntline 11 shown in FIG. 2.

The contacts 35 a through 35 d relative to the drain impurity regionsare electrically coupled to their corresponding variable resistiveelements formed in a layer thereabove.

The drain impurity regions 31 a through 31 d are respectively placed inpositions shifted from the X-direction central regions of thecorresponding memory cell forming regions 20. Namely, the distances fromthe ends of the drain impurity regions along the X direction to theboundary regions of the memory cell forming regions 20 are respectivelyL1 and L2 and satisfy the relationship of L1>L2. The drain contacts 35 athrough 35 d are disposed mirror-symmetrically with respect to theboundary regions of the memory cell forming regions 20. Thus, thedistances between the drain impurity regions of the memory cellsadjacent in the X direction are alternately brought to 2·L1 and 2·L2.The relationship of the distance between the drain impurity regions isrepeated along the X direction. Disposing the protrusions 33 a and 33 bof the gate word lines in the regions in which the distances definedbetween the drain impurity regions are 2·L1 makes it possible to disposethe protrusions 33 a through 33 d with sufficient margins.

By extending the protrusions 33 a through 33 d to the Y-directionboundary regions of the memory cell forming regions 20, the distancebetween each of the drain contacts 35 a through 35 d and itscorresponding shunt contact 34 can be made sufficiently large. Thus,even if positions displacements or pattern shifts (pattern failures) inthe protrusions at their patterning occur, it is possible to avoid theoccurrence of failures such as overlapping of the drain impurity regionsand the protrusions, the contact of the protrusions with the draincontacts, etc. The shunt contacts 34 and the drain contacts 35 a through35 d can also be laid out with sufficient margins upon memory cellminiaturization.

It is also possible to provide word line shunt regions in the memorycell forming regions and suppress an increase in the area of the memoryarray.

The drain contacts 35 a through 35 d are disposed mirror-symmetricallywith respect to the boundaries of the memory cell forming regions alongthe X direction. Thus, the distances in the X direction between thedrain contacts 35 b and 35 a can be made wide enough in regionscorresponding to regions for forming the source contacts 36 a and 36 b.Namely, the drain contact 35 b is disposed with being shifted from thecentral part of the memory cell forming region. A distance L4 from thedrain contact 35 b and the boundary of the memory cell forming region 20can be made enough for more than a distance L3 up to the boundary of thememory cell forming region in which the word line protrusion is formed.Accordingly, metal source lines each comprised of a metal wiring can bedisposed in regions in which the distance between the drain contacts is2·L4. The width of each upper metal source line electrically coupled toeach of the source line contacts 36 a and 36 b can be made wide enough,and the resistance of each source line can hence be reducedsufficiently.

FIG. 5 is a diagram schematically showing a sectional structure takenalong line V-V shown in FIG. 4. A sectional structure of two memory cellforming regions (indicated by broken lines) is shown in FIG. 5. In FIG.5, a memory cell is formed over a semiconductor substrate area or region1, and adjacent memory cells are separated from each other by shallowtrench isolation regions STI comprised of, for example, a shallow trenchisolation film. Incidentally, since the memory cell is formed over thesemiconductor substrate region 1 and the adjacent memory cells areseparated by the shallow trench isolation regions STI, reference numbersfor these semiconductor substrate region and shallow trench isolationregions are shown in the following description and their explanationswill therefore be omitted appropriately.

The source impurity region 30 a is disposed in the boundary region ofthe central memory cell. The gate word lines 32 a and 33 a are disposedin a layer above the source impurity region 30 a. With respect to thegate word line 32 a, the protrusion 33 a is disposed so as to extend tothe memory cell boundary region using the corresponding wiring of thesame layer. Equivalently, the gate word line extends to the memory cellboundary region. The shunt contact 34 is provided at the end (theboundary of the memory cell forming region) of the protrusion 33 a. Theprotrusion 33 c of the memory cell separated from the gate word line 32b and adjacent in the Y direction is disposed over the shallow trenchisolation region STI. The shunt contact 34 is disposed over theprotrusion 33 c. As shown in FIG. 4, one shunt contact 34 is merelyplaced in the boundary of the memory cell forming region extending inthe Y direction. Namely, one shunt contact 34 is merely disposed withrespect to the memory cells for the two rows, and the shunt contact 34can be disposed with a sufficient margin.

FIG. 6 is a diagram schematically showing a sectional structure takenalong line VI-VI shown in FIG. 4. A sectional structure of the twomemory cell forming regions (indicated by broken lines) is shown also inFIG. 6. In FIG. 6, the source line contact 36 a is disposed in thecenter of the source impurity region 30 a. The gate word lines 32 a and32 b are disposed in their corresponding upper layers on both sides ofthe source impurity region 30 a. Also in the regions, the gate wordlines 32 a and 32 b are merely provided on both sides of the sourceimpurity region 30 a, and hence the source line contact 36 a can bedisposed with a sufficient margin. Incidentally, also in the structureshown in FIG. 6, shallow trench isolation regions STI are disposed onboth sides of the source impurity region 30 a over the semiconductorsubstrate region 1 and separated from the adjacent memory cells.

FIG. 7 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line VII-VII shown inFIG. 4. In the regions, the drain impurity regions 31 b and 31 d arerespectively disposed opposite to each other on both sides of the sourceimpurity region 30 a. Shallow trench isolation regions STI are disposedadjacent to the drain impurity regions 31 b and 31 d respectively. Thegate word line 32 a is formed via a gate insulator GI over a regiondefined between the source impurity region 30 a and the drain impurityregion 31 b. The gate word line 32 b is disposed via a gate insulator GIover a region defined between the source impurity region 30 a and thedrain impurity region 31 d. The drain contacts 35 b and 35 d arerespectively provided over the drain impurity regions 31 b and 31 d.

Channels are normally formed below the gate word lines 32 a and 32 bwhen each access transistor is brought into conduction. An impurity isimplanted below the gate word lines 32 a and 32 b for adjustments to thethreshold voltage and the like. In the following description, the term“active region” is used as one indicative of an impurity-implantedregion including the source impurity region 30 a, drain impurity regions31 b and 31 d and channel forming regions (regions below the gate wordlines).

As shown in these FIGS. 5 and 7, the shunt contacts 34 for realizing aword line piling structure can be disposed in the memory cell formingregions. The word line piling structure can be implemented without theneed to provide special word line shunt regions and increasing thelayout area of each memory cell, thus making it possible to suppress anincrease in the layout area of the array.

FIGS. 8(A), 8(B) and 8(C) are respectively diagrams schematicallyshowing sectional structures of memory cell structures taken when thememory cell structures are seen in drain region directions along lineIIXA-IIXA, line IIXB-IIXB and line IIXC-IIXC shown in FIG. 4. The gateword line 32 a is disposed in FIG. 8(A). A plurality of channel regionsare disposed below the gate word line 32 a with being spaced from oneanother. Shallow trench isolation regions STI are disposed so as tointerpose these channel regions therebetween. The channel regions areseparated from one another by the shallow trench isolation regions STI.A gate insulator GI is disposed between each of the channel regions andthe gate word line 32 a.

The widths of the shallow trench isolation regions STI are distances2·L1 and 2·L2 set alternately. Namely, the widths of the shallow trenchisolation regions STI (1) and STI (3) correspond to 2·L1, and the widthof the shallow trench isolation region STI (2) corresponds to 2·L2.

As shown in FIG. 8(B), the drain contacts 35 a and 35 b are respectivelyprovided for the drain impurity regions 31 a and 31 b in regionsseparated from the word line 32 a shown in FIG. 8(A). The protrusion 33a is disposed over its corresponding shallow trench isolation region STIlying between the drain contacts 35 a (1) and 35 b (2).

The distances between these drain contacts 35 a and 35 b are 2·L3 and2·L4 set alternately. The drain contacts are disposedmirror-symmetrically with respect to the boundary of each memory cellforming region. Namely, the distance between the drain contacts 35 a (1)and 35 b (2) is 2·L3, and the distance between the drain contacts 35 b(2) and 35 a (3) is 2·L4. The distance between the drain contacts 35 a(3) and 35 b (4) is 2·L3. In regions in which the distance between thedrain impurity regions is 2·L1 and the distance between the draincontacts is 2·L3, the shunt contact 34 is provided with respect to theprotrusion 33 a.

Thus, the distance between the drain impurity regions 31 a and 31 b thatinterpose the protrusion 33 a coupled to the shunt contact 34therebetween is sufficiently wide like 2·L1. The word gate lineprotrusion can be accurately disposed with a sufficient margin inavoidance of overlapping thereof with the drain impurity region, etc.

In FIG. 8(C), the drain impurity regions 31 c and 31 d are alternatelyplaced. Also in this placement, the distances of 2·L1 and 2·L2 arealternately set as for the distance between the drain impurity regions31 c and 31 d.

The drain contacts 35 c and 35 d are respectively provided with respectto these drain impurity regions 31 c and 31 d. The shunt contact 34 isprovided via the protrusion 33 b of the gate word line 32 b. The shuntcontact 34 corresponds to the region in which the distance between thedrain impurity regions is set as an interval of 2·L1. The shunt contacts34 relative to the gate word lines 32 a and 32 b are placed in differentpositions as shown substantially in registration form in FIGS. 8(B) and8(C) to thereby make it possible to avoid the occurrence of crosstalkbetween the corresponding word lines via their protrusions and shuntcontacts 34.

FIG. 9 is a diagram schematically showing a layout of upper first metalwirings in the plane layout shown in FIG. 4. The gate word lines 32 athrough 32 d, the drain contacts 35 a through 35 d and the shuntcontacts 34 are shown in FIG. 9 together.

In FIG. 9, first intermediate wirings 40 a through 40 d each formed ofthe first metal wiring are respectively disposed corresponding to thedrain contacts 35 a through 35 d. The first intermediate wirings 40 aand 40 b are disposed alternately along the X direction, and the firstintermediate wirings 40 c and 40 d are disposed alternately along the Xdirection. The first intermediate wirings 40 a and 40 c are disposedalternately in the Y direction. Further, the first intermediate wirings40 b and 40 d are disposed alternately in the Y direction.

The first intermediate wirings 40 a through 40 d respectively have arectangular shape long in the Y direction and are disposed so as tocross the corresponding gate word lines 32 a and 32 b from theboundaries of the memory cell forming regions 20. The first intermediatewirings 40 a through 40 d configure parts of intermediate plugs forelectrical coupling to variable magnetoresistive elements formed in anupper layer. The drain impurity regions 31 a through 31 d of the accesstransistors are electrically coupled to their corresponding variablemagnetoresistive elements via the corresponding drain contacts 35 athrough 35 d.

The first intermediate wirings 40 a through 40 d are disposedtranslation-symmetrically along the X and Y directions to lay out themin closest-packed form and disposed repeatedly in the same pattern.Thus, these first intermediate wirings 40 a through 40 d are disposedsubstantially in the central regions of the memory cell forming regions20.

First vias 42 a through 42 d are respectively provided corresponding tothe drain contacts 35 a through 35 d with respect to the firstintermediate wirings 40 a through 40 d for their coupling to upper layerwirings. The first vias 42 a through 42 d are arranged substantially inline along the X and Y directions. The first vias 42 a and 42 b arealternately disposed in the X direction, and the first vias 42 c and 42d are alternately disposed in the X direction. The first vias 42 a and42 c are alternately disposed in the Y direction, and the first vias 42b and 42 d are alternately disposed in the Y direction.

The first intermediate wirings 44 a and 44 c are respectively arrangedin line along the Y direction between the first intermediate wirings 40a and 40 b in association with the gate word lines 32 a and 32 c. Thefirst intermediate wirings 44 b and 44 d are arranged in line in the Ydirection so as to correspond to the shunt contacts 34 with respect tothe word lines 32 b and 32 d. These first intermediate wirings 44 athrough 44 d are intermediate wirings for realizing a word line shuntstructure and are disposed so as to extend from the corresponding shuntcontacts 34 to over the corresponding gate word lines 32 a through 32 d.

At the adjacent columns, the shunt contacts 34 are disposed at distancesof two memory cells. At the same row, the shunt contacts 34 are disposedevery two rows. Thus, the intermediate wirings 44 a through 44 d arealso disposed with pitches similar to the shunt contacts 34.

First vias 46 a and 46 c are provided at layers above theircorresponding gate word lines 32 a and 32 c with respect to the shuntfirst intermediate wirings 44 a and 44 c. First vias 46 b and 46 d aredisposed at layers above their corresponding gate word lines 32 b and 32d also with respect to the first intermediate wirings 44 b and 44 d. Theshunt intermediate wirings 44 a through 44 d are also disposedtranslation-symmetrically with respect to the Y direction.

A metal source line 48 formed of a first metal wiring, which extendscontinuously in the Y direction, is disposed corresponding to the sourceline contacts 36 a and 36 b. The metal source line 48 is electricallycoupled to a lower source impurity region (not shown in FIG. 9) via thesource line contacts 36 a and 36 b.

The first via 46 a for word line shunt is disposed in a zigzag mannerwith respect to the drain-coupling first vias 42 a and 42 b. The firstvias 46 b through 46 d relative to the first intermediate wirings 44 bthrough 44 d for other word line contacts are also disposed in a zigzagmanner with respect to the drain-coupling first vias 42 a through 42 d.Thus, the distance between the first vias can be taken sufficiently.Since the distance between the drain contacts of each adjacent pair inthe X direction, of the drain contacts 35 a through 35 d is largesufficiently even if the distance between the drain impurity regions isnarrow, the metal source line 48 can be disposed with a sufficientwidth. Thus, the metal source line 48 low in resistance can be laid out.The first intermediate wirings 44 a through 44 d are respectivelydisposed at the boundaries of the memory cell forming regions 20 in theX direction. Each of the drain-coupling first intermediate lines 40 athrough 40 d is placed in the center in the X direction, of the memorycell forming region 20. The word shunt first intermediate wirings 44 athrough 44 d can be disposed with sufficient margins in association withthe gate word line protrusions.

The drain contacts 35 a and 35 b located on both sides of the sourcecontact 36 a as viewed in the X direction are disposed with beingshifted in the direction of being spaced away from the source linecontact 36 a with respect to the centers of the drain impurity regions31 a and 31 b, thereby making it possible to make broader the width ofthe metal source line 48 formed in the same layer as the firstintermediate wirings 40 a and 40 b to reduce the resistance.

FIG. 10 is a diagram showing a plane layout of second metal wirings forupper layers in the plane layout shown in FIG. 9 together with a layoutof second vias. In FIG. 10, second intermediate wirings 50 a through 50d each configured by a second metal wiring in a rectangular form long inthe X direction are respectively disposed in association with oneanother so as to cross the first intermediate wirings 40 a through 40 d.At these second intermediate wirings 50 a through 50 d, the secondintermediate wirings 50 a and 50 b are alternately disposed along the Xdirection, and the second intermediate wirings 50 c and 50 d arealternately disposed along the X direction.

Second metal wirings (metal word lines) 52 a through 52 d are disposedso as to continuously extend in the X direction over the first vias 46 athrough 46 d provided in the shunt first intermediate wirings 44 athrough 44 d shown in FIG. 9 and to correspond to the unillustrated gateword lines. These second metal wirings 52 a through 52 d arerespectively coupled to the lower first intermediate wirings 44 athrough 44 d via the first vias 46 a through 46 d. The firstintermediate wirings 44 a through 44 d are coupled to theircorresponding gate word lines via the shunt contacts 34 shown in FIG. 9.Thus, these second metal wirings 52 a through 52 d are coupled to theircorresponding gate word lines located therebelow. Consequently, a wordline hierarchical structure in which the word lines comprise the gateword lines and the metal word lines, is realized, and the word lines lowin resistance are implemented.

These second metal wirings 52 a through 52 d are metal wirings locatedat the layers above the first intermediate wirings 44 a through 44 d.Thus, even when the shunt first intermediate wirings 44 a through 44 dextend to the boundaries of the memory cell forming regions along the Ydirection, these shunt first intermediate wirings 44 a through 44 d donot have any adverse effect on the layout of the second metal wirings 52a through 52 d.

FIG. 11 is a diagram schematically illustrating a sectional structure oftwo memory cell system cell regions, which is taken along line XI-XI ofthe plane layout shown in FIG. 10. The layout of the lower layer of thesectional structure shown in FIG. 5 is also shown together in FIG. 11.The gate word lines 32 a and 32 b are disposed at layers above bothsides of the source impurity region 30 a. The gate word line 32 aextends to the boundary of each memory cell forming region via theprotrusion 33 a. The protrusion 33 a is electrically coupled to itscorresponding first intermediate wiring 44 a via the shunt contact 34.

The first intermediate wiring 44 c is electrically coupled also to itscorresponding protrusion 33 c of the adjacent memory cell via the shuntcontact 34.

The first intermediate wiring 44 a is electrically coupled to itscorresponding second metal wiring 52 a via a second via 46 a. Ahierarchical word line is configured by the second metal wiring 52 a,the first intermediate wiring 44 a comprised of the first metal wiring,the protrusion 33 a and the gate word line 32 a. The corresponding gateword line relatively high in resistance is electrically coupled to thesecond metal wiring 52 a low in resistance so that the resistance isreduced equivalently. A second metal wiring 52 b is similarly providedalso with respect to the gate word line 32 b.

FIG. 12 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line XII-XII shown inFIG. 10. In FIG. 12, the metal source line 48 comprised of the firstmetal wiring extends continuously. The metal source line 48 iselectrically coupled to its corresponding lower source impurity region30 a via the source line contact 36 a. The second metal wirings 52 a and52 b are provided so as to cross the metal source line 48. Underneaththe metal source line 48, the gate word lines 32 a and 32 b are disposedat layers above both sides of the source impurity region 30 a.

FIG. 13 is a diagram schematically depicting a sectional structure oftwo memory cell forming regions, which is taken along line XIII-XIIIshown in FIG. 10. The sectional structure shown in FIG. 13 has aconfiguration in which second metal wirings are further disposed withrespect to the sectional structure shown in FIG. 7. In FIG. 13, the samereference numerals are respectively attached to parts or componentscorresponding to those of the configuration shown in FIG. 7, and theirdetailed explanations will therefore be omitted.

At such regions, as shown in FIG. 13, the drain impurity regions 31 band 31 d are electrically coupled to their corresponding firstintermediate wirings 40 b and 40 d via the drain contacts 35 b and 35 d.The first intermediate wirings 40 b and 40 d are electrically coupled totheir corresponding second intermediate wirings 50 b and 50 d via secondvias 42 b and 42 d. The second metal wirings 52 a and 52 b are disposedadjacent to the second intermediate wirings 50 b and 50 d.

As shown in FIGS. 10 through 13, the second metal wirings and the secondvias are also laid out translation-symmetrically and disposed repeatedlyin the same patterns along the X and Y directions. Thus, the wirings canbe disposed in a high density.

FIGS. 14(A) and 14(B) are respectively diagrams schematically showingsectional structures taken along line XIVA-XIVA and line XIVB-XIVA shownin FIG. 10. A sectional structure taken when a memory cell structure isseen toward the left side of the drawing along line XIVA-XIVA istypically shown in FIG. 14(A). A sectional structure taken when a memorystructure is seen to the right side of the drawing along line XIVB-XIVBis shown in FIG. 14(B).

In FIG. 14(A), the shallow trench isolation regions STI and channelregions are alternately disposed at the surface of the semiconductorsubstrate region 1. The gate insulators GI are formed over the channelregions respectively. The gate word line 32 a is continuously disposedover the gate insulators GI and the shallow trench isolation regionsSTI. The unillustrated drain impurity regions 31 a and 31 b areelectrically coupled to their corresponding first intermediate wirings40 a and 40 b by means of the unillustrated drain contacts 35 a and 35b. The second metal wiring 52 a that extends continuously is provided atan upper layer. The second metal wiring 52 a is electrically coupled tothe gate word line 32 a via the unillustrated shunt contact 34, firstintermediate wiring 44 a and first via 46 a.

In FIG. 14(B), the drain impurity regions 31 a and 31 b are alternatelydisposed in the surface of the semiconductor substrate region 1 andseparated from each other by the shallow trench isolation regions STI.The drain impurity regions 31 a and 31 b are electrically coupled totheir corresponding upper first intermediate wirings 40 a and 40 b bymeans of the drain contacts 35 a and 35 b. The metal source line 48configured of the first metal wiring is disposed between the firstintermediate wirings 40 b and 40 a at the central part thereof.

The first intermediate wirings 40 a and 40 b are coupled to theircorresponding second intermediate wirings 50 a and 50 b each configuredof the second metal wiring via the first vias 42 a and 42 b. On theother hand, the protrusions 33 a are electrically coupled to the firstmetal wiring 44 a via the unillustrated shunt contact 34.

The metal source line 48 is disposed in the region in which the distancebetween the drain contacts is 2·L4. The protrusion 33 a and the firstintermediate wiring and shunt contact 34 (not shown) for performing wordline shunt are disposed in the region in which the interval or spacebetween the drain impurity regions is 2·L3.

The second vias Va and Vb for electrical coupling to the upper layerwirings are provided at the second metal wirings 50 a and 50 brespectively.

In FIGS. 14(A) and 14(B), the respective regions as viewed in the Xdirection are brought approximately into registration with respect tothe X direction. The shunt region in which the second metal wiring 52 ais electrically coupled to its corresponding gate word line 32 a isindicative of the region in which the distance between the drainimpurity regions is 2·L1. The region in which the metal source line 48is disposed is indicative of the region in which the distance betweenthe drain contacts is 2·L4. Accordingly, each of the word line pilingregion and the source line piling region can be disposed within thememory cell forming region without providing specific regions.

FIG. 15 is a diagram schematically showing a plane layout of upper thirdmetal wirings in the plane layout shown in FIG. 10. The layout of thesecond metal wirings is also shown together in FIG. 15.

In FIG. 15, third intermediate wirings 60 a through 60 d each comprisedof the third metal wiring are disposed corresponding to the secondintermediate wirings 50 a through 50 d so as to overlap with theircorresponding second intermediate wirings. These third intermediatewirings 60 a through 60 d are electrically coupled to theircorresponding second intermediate wirings 50 a through 50 d via thesecond vias Va through Vd.

Third metal wirings 62 a through 62 d are disposed so as to overlap withthe second metal wirings 52 a through 52 d in association with thesecond metal wirings 52 a through 52 d. The third metal wirings 62 athrough 62 d are brought into non-contact with the lower second metalwirings 52 a through 52 d. While second vias 46 a through 46 d forword-line contact are respectively disposed at predetermined intervals,they are provided to make electrical coupling between the second metalwirings 52 a through 52 d and the lower first intermediate wirings (50 athrough 50 d).

Disposing the third metal wirings 62 a through 62 d so as to overlapwith the second metal wirings 52 a through 52 d makes uniform a layoutstep between each of the upper variable magnetoresistive elements andits corresponding write word line (digit line). Also the MRAM cell isformed in the same manufacturing process as that of an unillustratedprocessor.

FIG. 16 is a diagram schematically illustrating a plane layout of upperfourth metal wirings in the plane layout shown in FIG. 15. The layout ofthe third metal wirings 60 a through 60 d and 62 a through 62 d shown inFIG. 15 is shown together in FIG. 16.

In FIG. 16, fourth intermediate wirings 65 a through 65 d each comprisedof the fourth metal wiring are respectively disposed so as to overlapwith the third intermediate wirings 60 a through 60 d. These fourthintermediate wirings 65 a through 65 d are electrically coupled to theircorresponding third intermediate wirings 60 a through 60 d via thirdvias VVa through VVd.

On the other hand, fourth metal wirings 67 a through 67 d arerespectively provided so as to overlap with the third metal wirings 62 athrough 62 d. These fourth metal wirings 67 a through 67 d configurewrite word lines (digit lines) respectively.

FIG. 17 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line A17-A17 shown inFIG. 16. The sectional structure shown in FIG. 17 shows the layout ofupper third and fourth metal wirings in the sectional structure shown inFIG. 11. The same reference numerals are attached to their correspondingparts at the components for the layers below the lower second metalwirings, and their detailed explanations will therefore be omitted.

In FIG. 17, the third metal wirings 62 a and 62 b are disposed over thesecond metal wirings 52 a and 52 b. The fourth meal wirings 67 a and 67b are disposed in alignment with the third metal wirings 62 a and 62 band thereabove.

FIG. 18 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line A18-A18 shown inFIG. 16. The sectional structure shown in FIG. 18 shows the layout ofthe upper third and fourth metal wirings with respect to the sectionalstructure shown in FIG. 12. Thus, also in FIG. 18, the same referencenumerals are respectively attached to parts or components correspondingto the sectional structure shown in FIG. 12, and their detailedexplanations will therefore be omitted.

In FIG. 18, the third metal wiring 62 a and the fourth metal wiring 67 aare sequentially laminated and disposed in alignment with the secondmetal wiring 52 a. Similarly, also with respect to the second metalwiring 52 b, the third metal wiring 62 b and the fourth metal wiring 67b are sequentially disposed in alignment with the upper layer.

FIG. 19 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line A19-A19 shown inFIG. 16. The sectional structure shown in FIG. 19 shows the layout ofupper layer wirings in the sectional structure shown in FIG. 13. Thesame reference numerals are attached to their corresponding componentslocated below the second metal wirings, and their detailed explanationswill therefore be omitted.

The third intermediate wiring 60 b is disposed in line over the secondintermediate wiring 50 b. The fourth intermediate wiring 65 b comprisedof the fourth metal wiring is disposed in line over the thirdintermediate wiring 60 b. The third intermediate wiring 60 b and thesecond intermediate wiring 50 b are electrically coupled to each otherby means of their corresponding first via Vb. The third intermediatewiring 60 b and the fourth intermediate wiring 65 b are electricallycoupled to each other by means of their corresponding second via VVb.

The third metal wiring 62 a and the fourth metal wiring 67 a aredisposed in line over the second metal wiring 52 a. The fourth metalwiring 67 a configures a digit line.

Similarly, the third intermediate wiring 60 d and the fourthintermediate wiring 65 d are disposed in line over the secondintermediate wiring 52 d. The third metal wiring 62 b and the fourthmetal wiring 67 b are disposed in line over the second metal wiring 52b. The second intermediate wiring 52 b and the third intermediate wiring60 b are electrically coupled to each other by means of theircorresponding first via Vd. The third intermediate wiring 60 d and theforth intermediate wiring 65 b are electrically coupled to each other bymeans of their corresponding second via VVd.

Also where the aspect ratio of the electrical contact/plug to eachvariable magnetoresistive element formed in the upper layer becomes highby electrically coupling each of the first intermediate wirings eachformed of the first metal wiring to each of the fourth intermediatewirings each formed of the fourth metal wiring through the via, theelectrical contacts can be formed reliably.

In the configurations for providing electrical coupling to the variablemagnetoresistive elements as shown in FIGS. 16 through 19, their wiringlayouts have translational symmetry and the wirings can be disposed in ahigh density and with wiring-to-wiring pitches being kept at theminimum.

FIG. 20 is a diagram schematically illustrating a plane layout ofvariable magnetoresistive elements disposed over the plane layout shownin FIG. 16. In FIG. 21, patterns each having the same shape are disposedin the respective memory cell forming regions 20. Namely, third vias 69are disposed in the centers of the fourth intermediate wirings 65 athrough 65 d. Local wirings 70 substantially square in shape aredisposed over the third vias 69 respectively. The local wirings 70 areelectrically coupled to their corresponding lower fourth intermediatewirings 65 a through 65 d through the third vias 69. Since the localwirings 70 and the third vias 69 are identical in layout in the memorycell forming regions arranged in 4 rows and 4 columns shown in FIG. 20,reference numerals for these components are attached only to the memorycell forming regions disposed at the outer periphery of the 4 rows and 4columns.

Variable magnetoresistive elements 72 are respectively disposed atpositions on the local wirings 70, corresponding to the fourth metalwirings 67 a through 67 d. Each of the variable magnetoresistiveelements 72 has a shape surrounded by two arcs different in curvaturefrom each other. Forming each variable magnetoresistive element in asemicircular or crescent-shaped manner suppresses magnetizationinversion at its peripheral region and suppresses the occurrence ofmiswriting.

Upper electrodes 74 are disposed in the centers of the variablemagnetoresistive elements 72. Each of the upper electrodes 74 has thefunction of forming the electrical contact to each bit line disposed atits upper layer together.

As shown in FIG. 20, the layouts of parts related to the variablemagnetoresistive elements are all repeatedly arranged in the samepatterns in the X and Y directions. This simplifies the layout of thepatterns for the variable magnetoresistive elements, realizes accuratepatterning and suppresses variations in the resistance values of thevariable magnetoresistive elements.

FIG. 21 is a diagram schematically showing a layout of upper fifth metalwirings in the plane layout shown in FIG. 20. In FIG. 21, referencenumerals are attached to a plane layout for one MRAM cell with respectto a MRAM cell configuration. The layout of the local wiring 70,variable magnetoresistive element 72 and upper electrode 74 is identicalin the respective memory cell forming regions 20. The same pattern isrepeatedly disposed in the X and Y directions with respect to therespective memory cell forming regions.

Fifth metal wirings 80 a through 80 d respectively extend continuouslyin the Y direction and are respectively disposed corresponding to therespective memory cell columns with being spaced from one another. Thefifth metal wirings 80 a through 80 d respectively configure bit linesand are electrically coupled to the upper electrodes 74 of thecorresponding memory cells (variable magnetoresistive elements). Thus,the variable magnetoresistive elements 72 are electrically coupled totheir corresponding bit lines (80 a through 80 d).

FIG. 22 is a diagram schematically illustrating a sectional structure oftwo memory cell forming regions, which is taken along line A22-A22 shownin FIG. 21. The sectional structure shown in FIG. 22 corresponds to thesectional structure shown in FIG. 17. The local wirings 70 are notprovided at the boundary regions of the memory cell forming regionsalong the X direction. The sectional structure shown in FIG. 22 becomesthe same structure as the sectional structure shown in FIG. 17. Theircorresponding parts are given the same reference numerals respectivelyand their detailed explanations will therefore be omitted.

FIG. 23 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line A23-A23 shown inFIG. 21. The sectional structure shown in FIG. 23 corresponds to asectional structure of a region in which a metal source line 48 isdisposed. Since no memory cells are formed in the region, the variablemagnetoresistive elements 72 are not disposed and the local wirings 70are not disposed either. Accordingly, the sectional structure shown inFIG. 23 becomes the same structure as the sectional structure shown inFIG. 18. The same reference numerals are attached to their correspondingparts, and their detailed explanations will therefore be omitted.

FIG. 24 is a diagram schematically showing a sectional structure of twomemory cell forming regions, which is taken along line A24-A24 shown inFIG. 21. In the sectional structure shown in FIG. 24, variablemagnetoresistive elements are further disposed in the upper layer of thesectional structure shown in FIG. 19. In FIG. 24, parts corresponding tothose of the configuration shown in FIG. 19 are respectively given thesame reference numerals, and their detailed explanations will thereforebe omitted.

In the memory cell forming regions, the third vias 69 are disposed overtheir corresponding fourth intermediate wirings 65 b and 65 d. Thesethird vias 69 are respectively electrically coupled to the local wirings70. The variable magnetoresistive elements 72 are disposed over thelocal wirings 70 so as to align with the fourth metal wirings 67 a and67 b. The variable magnetoresistive elements 72 are electrically coupledto the upper fifth metal wiring 80 d via the upper electrodes 74. Thefifth metal wiring 80 d configures a bit line.

As shown in these FIGS. 24 and 21, the wirings disposed in the layersabove the access transistors are repeatedly disposed in the same patternalong the X and Y directions. The wirings respectively havetranslational symmetry and can be disposed in a high density.

Incidentally, although described in detail later, the first intermediatewirings 40 b and 40 d for coupling the variable magnetoresistiveelements and the drain regions of the access transistors are all madeequal in length with respect to the memory cells of each adjacentcolumn. Thus, the electric resistances and parasitic capacitances fromthe bit lines to the source lines (fifth metal wirings 80 (80 a through80 d) to the source impurity regions 30 (30 a and 30 b)) are made equalrespectively, and RC delays of paths through which write and readcurrents flow, are made equal to each other, thereby uniformizingwrite/read characteristics at the respective memory cells.

According to the first embodiment of the present invention as describedabove, the word line shunt forming regions are disposed in the boundaryregions of the memory cell forming regions, extending along the Xdirection. Further, the word line shunt contacts are disposed in theboundary regions extending in the Y direction, of the memory cellforming regions. It is thus possible to sufficiently enlarge thedistance between each of the word line shunt contacts and each of thedrain contacts for coupling the access transistors to the variablemagnetoresistive elements. Accordingly, even if pattern shifts occur atthe word line shunt protrusions, it is possible to suppress theoccurrence of contact with the drain contacts or the drain impurityregions or the overlaying of the drain impurity regions and theprotrusions and prevent transistor characteristics from beingdeteriorated.

The word line shunt protrusions are disposed in the boundary regionsextending along the X direction, of the memory cell forming regions. Theprotrusions can therefore be disposed with sufficient margins withoutincreasing the layout areas of the memory cell forming regions (this isbecause the drain impurity regions are different in spacing along the Xdirection every two memory cells). The distances between the draincontacts are made different every memory cell in like manner.Consequently, each metal source line can be disposed in the region inwhich the distance between the drain contacts is large, and the metalsource line broad in width can be disposed with a margin.Correspondingly, the source line resistance of the mesh-like source linestructure can be further reduced.

Since the word line shunt regions are respectively placed in thepositions different at the adjacent rows and the source contacts aredisposed between the adjacent rows, one word line shunt region can bedisposed every four rows at the individual memory cell columns. Further,the source line shunt contacts can be disposed one every two rows orcolumns at the respective metal source lines. Thus, the metal sourcelines can be disposed every two memory cells in the X direction (this isbecause, since each metal source line is disposed in the region in whichthe distance between the drain contacts is long, the region in which thedistance between the drain contacts is large is provided one every twomemory cells along the X direction).

Second Embodiment

FIG. 25 is a diagram schematically showing a fragmentary configurationof an MRAM according to a second embodiment of the present invention. Amode of coupling of MRAM cells to a sense amplifier where at memorysubarrays 2 a and 2 b, memory cells of the memory subarray 2 a areselected is schematically shown in FIG. 25. At the memory subarray 2 a,memory cells MCa and MCb are coupled to a bit line BLaW. These memorycells MCa and MCb are different in position within the memory subarray 2a. Gates of corresponding access transistors ATR are coupled to theircorresponding word lines WLaW and WLbW.

The bit line BLaW is coupled to its corresponding sense amplifier SA0upon data reading. At the memory cell MCa, a variable magnetoresistiveelement VR and an access transistor ATR are interconnected with eachother by means of an internal wiring LNa (intermediate wiring 40: any of40 a through 40 d). At the memory cell MCb, a variable magnetoresistiveelement VR and an access transistor ATR are interconnected with eachother by means of an internal wiring LNb (40).

On the other hand, at the memory subarray 2 b, reference cells DMC0 andDMC1 are disposed in the center thereof as viewed in its columndirection (bit line extending direction). These reference cells DMC0 andDMC1 respectively have the same structure as the memory cells MCa andMCb. Gates of access transistors ATR of the reference cells are coupledin common to a dummy word line DWLE. A variable magnetoresistive elementVR and an access transistor ATR of each reference cell are coupled toeach other by means of an internal wiring Ld.

The variable magnetoresistive element VR of the reference cell DMC0 isset to a high resistance state and has a resistance value Rmax. Thevariable magnetoresistive element VR of the reference cell DMC1 is setto a low resistance value and has a resistance value Rmin.

Upon the data reading, the sense amplifier SA0 detects the level ofcurrent flowing through the bit line BLaW with the average value ofreference currents flowing through the bit lines BLaE and BLbE as areference current and thereby generates internal read data DQ<0>.

At these reference cells DMC0 and DMC1, their positions are fixedlydefined within the memory subarray 2 d. Accordingly, the referencecurrent for the sense amplifier SA0 can be set nearly constant.

On the other hand, at the memory subarray 2 a, the memory cells MCa andMCb are different in position therewithin. The distance between the bitline BLaW and the sense amplifier SA0 varies. When the resistance valuesof the MRAM cells (variable magnetoresistive elements VR) coupled to thebit line BLaW differ from each other, the influence of resistance valuesand parasitic capacitances contained in the internal wirings LNa and LNbon the bit line BLaW varies. Particularly when the parasiticcapacitances and wiring capacitances of the internal wirings LNa and LNbdiffer upon data reading, there occurs a case where the differencesbetween the memory cell current and the reference currents flowingthrough the bit lines BLaE and BLbE differ, thereby causing apossibility that it will not be possible to perform accurate reading.

Particularly when the number of memory cells in the memory subarray 2 aincreases, the wiring capacitance of each bit line BLaW increases.Therefore, the influence of variations in the capacitance of each bitline becomes large. Thus, even when the access transistors are disposedmirror-symmetrically at the MRAM cells, the upper internal wirings LNaand LNb are shaped in the same form of translational symmetry, theirlengths are made equal to each other and the parasitic capacitances andresistances thereof are set equal to each other.

Thus, even when the positions in the memory subarrays 2 b of thereference cells DMC0 and DMC1 are different, i.e., where MRAM cellslying in even-numbered rows are used as reference cells at the memorysubarray 2 b and MRAM cells lying in odd-numbered rows are used asreference cells, the capacitances/wiring resistances of internal wiringsLd of the reference cells can always be set equal to each selectedmemory cell. Consequently, the trouble of, for example, providing thereference cells in two rows according to the position of each selectedmemory cell at the memory subarray 2 a and selecting the reference cellsof the same shape (internal wirings for drain contacts are of the sameshape) according to the position of each selected memory cell at thememory subarray 2 a becomes unnecessary and control becomes easy.Further, the reference currents can be generated accurately by means ofthe reference cells corresponding to one row, and the area of a layoutregion of each reference cell can be reduced.

FIG. 26 is a diagram schematically illustrating a sectional structure ofmemory cells MCo and MCe according to the second embodiment of thepresent invention. These memory cells MCo and MCe share a source line SL(source impurity region 30). At these memory cells MCo and MCe, thelengths of first metal wirings (first intermediate wirings) 40 o and 40e formed in a first metal wiring layer (M1) are both set to LNL. It isthus possible to equalize wiring resistances and capacitances for drainimpurity regions 31 o and 31 e of an active region 1F as viewed from aleading or drawing electrode layer LS of each variable magnetoresistiveelement VR.

Access transistors ATRo and ATRe are disposed symmetrically with respectto the boundary region between the memory cells MCo and MCe, and channelresistances are set equal to each other. Accordingly, the lengths eachextending from a bit line BL formed in a fifth metal wiring layer M5 tothe source line SL formed by the source impurity region 30 can be madeequal, and the wiring resistance and capacitance can be equalized.

Since the lengths of respective wirings/vias/contacts at an upperelectrode layer TV, a variable magnetoresistive element layer TMR, theleading electrode layer LS, leading electrode vias LV, a fourth metalwiring layer M4, a third metal wiring layer M3, a third via layer V3, asecond via layer V2, the first metal wiring layer M1 and a contact layerCT are set equal to one another in FIG. 26, the distances each extendingbetween the bit line BL and the active region 1F can all be set equal.Further, all of the upper layer wirings of the access transistors ATRoand ATRe have translational symmetry and their shapes are set equal.Thus, the resistance and capacitance (except for the resistance value ofeach variable magnetoresistive element VR) of each path extending fromthe bit line to the source line can be set equal at each memory cell.

MODIFICATION

FIG. 27 is a diagram schematically depicting a fragmentary configurationof an MRAM of a modification of the second embodiment of the presentinvention. In FIG. 27, memory cells MC0 through MCn are disposed in linein a row direction at a memory subarray 2. In the memory cell row,reference cells DMC0 and DMC1 identical in structure to the memory cellsMC0 through MCn are disposed in line in the center of the memorysubarray. The reference cell DMC0 is placed in a high resistance stateand has a resistance value Rmax. The reference cell DMC1 is placed in alow resistance state and has a resistance value Rmin. Bit lines BL0through BLn are disposed corresponding to the memory cells MC0 throughMCn respectively. Reference bit lines DBL0 and DBL1 are disposedcorresponding to the reference cells DMC0 and DMC1 respectively.

At the layout of the memory subarray shown in FIG. 27, the memory cellsand the reference cells are disposed together in line in the rowdirection at one memory subarray 2. The reference cells are respectivelydisposed corresponding to dummy cell columns.

Internal read data lines RD0, RDB0, RD1 and RDB1 are disposed inside thememory subarray 2 for the purpose of data reading. The internal readdata lines RD0 and RDB1 are respectively coupled to positive andnegative inputs of a sense amplifier SA0. The internal read data linesRD1 and RDB1 are respectively coupled to positive and negative inputs ofa sense amplifier SA1.

The negative inputs of the sense amplifiers SA0 and SA1 areinterconnected with each other. Upon the data reading, for example, thebit lines BL0 and BL1 are selected and coupled to the internal read datalines RD0 and RD1 respectively. Here, a column selection circuit forselecting a read column is not shown in FIG. 27 for simplification ofthe drawing.

At this time, the reference bit lines DBL0 and DBL1 are respectivelycoupled to the internal read data lines RDB0 and RDB1. The senseamplifiers SA0 and SA1 are activated to execute sense operations. Atthis time, the negative inputs of the sense amplifiers SA0 and SA1 areinterconnected with each other and hence the average value of areference current I (Rmax) flowing through the reference cell DMC0placed in the high resistance state and a current I (Rmin) flowingthrough the reference cell DMC1 placed in the low resistance state flowsinto the negative inputs of the sense amplifiers SA0 and SA1 as areference current. With the average current of the negative inputs asthe reference current, currents that flow through the bit lines BL0 andBL1 via the internal read data lines RD0 and RD1 are detected togenerate internal read data DQ<0> and DQ<1>.

In the configuration shown in FIG. 27, the positions in the columndirection, of the reference cells differ according to the positions inthe column direction (bit line extending direction) of the selectedmemory cells. Thus, the lengths of internal coupling nodes LN of eachmemory cell MC and each reference cell DMC are set equal to each other.Consequently, the capacitances of the bit line and dummy bit line can beset constant regardless of the position of each selected word line. Thetiming provided to generate a necessary difference between the referencecurrent and the cell current can be kept nearly constant. Further, asense margin can be made large and sense timing can be fastened.

According to the second embodiment of the present invention as describedabove, the lengths (with respect to the bit line extending direction) ofthe coupling wirings (intermediate wirings) relative to the drainimpurity regions between the access transistors and the variablemagnetoresistive elements are set equal at the memory cells that sharethe source line. Regardless of the positions of the memory cells, theparasitic resistances and capacitances incidental on the drain impurityregions can be equalized. Correspondingly, variations in RC delay ofeach bit line can be suppressed. It is thus possible to suppressvariations in the cell current and the reference current at the datareading and perform accurate data reading with quick timing.

Third Embodiment

FIG. 28 is a diagram schematically showing a distribution of an initialresistance value of each variable magnetoresistive element at one memorysubarray 2. In FIG. 28, the initial resistance value Rm of the variablemagnetoresistive element easily increases from the center 0 of thememory subarray 2 to its ends (Lx and −Lx) in the X direction andbecomes the highest at its peripheral portion. Similarly, as thedistance from the center increases from the center (0) of the memorysubarray 2 to its ends +Ly and −Ly in the Y direction, the initialresistance value Rm increases.

At each MRAM cell, a variable magnetoresistive element is formed by aferromagnetic body and a barrier layer lying therebetween. Theresistance value of the variable magnetoresistive element exponentiallyincreases in accordance with the film thickness of the barrier layer. Itis thus necessary to couple the barrier layer as thinly as possible.There is a need to accurately determine the composition and shape of theferromagnetic body. Since the variable magnetoresistive element isformed between upper layer metal wirings like the fourth and fifth metalwiring layers in particular, it is susceptible to the shape/height of abase or bed. Therefore, planarization is difficult and the filmthickness or the like of the variable magnetoresistive element is liableto change at a CMP (chemical mechanical polishing) process at theplanarization. The degree of this influence has a tendency to increaseat the end of a memory subarray at the end of each repetitive pattern.

Normally, in order to accurately patternize such repetitive patternsthat the same pattern is repeatedly disposed as in the memory cell arrayor the like, dummy patterns each having the same pattern are disposedoutside the region in which the repetitive patterns are disposed. Theyare generally called “shape dummy cells” at each memory. By disposingthe same patterns to the outside continuously, the implementation ofaccurate patterning is achieved while suppressing variations in the maskand condition at exposure in a manufacturing process at a memory arrayend. At the periphery of the memory subarray 2, however, the samepatterns are not repeatedly disposed over a sufficient distance ascompared with each memory cell located at its central part, andvariations in the flatness at the CMP process occur due to an influencesuch as a step due to pattern variations. Hence the resistance value ofthe variable magnetoresistive element of each memory cell at theperipheral portion tends to increase.

In general, each memory cell for storing data therein is disposed usinga region or area lying within a range in which variations in the initialresistance value Rm are allowed at the memory subarray 2. The area, inwhich the variations in the resistance value are large, is used as aso-call shape dummy cell area and simply utilized only to maintain theregularity of patterning.

Normally, when the memory cell current and the reference current areutilized upon the data reading, the reference current is generated usingthe corresponding reference cell having the same structure as each MRAMcell. Thus, the influence of variations in the manufacture of each MRAMcell can be cancelled out by the MRAM cell and the reference cell withinone memory subarray. In this case, there is, however, a possibility thatwhen each reference cell is disposed at the end of the memory subarray,its initial resistance value varies with respect to a predeterminedvalue and the accurate reference current (intermediate current) cannotbe generated.

There are therefore provided regions or areas in which variations in theinitial resistance values of the variable magnetoresistive elements aresmall, i.e., reference areas (dummy cell areas 15W and 15E shown in FIG.2) in which reference cells are disposed in the central region of thememory subarray 2. Namely, the reference cells are disposed in either ofreference cell (dummy cell) regions or areas RGX and RGY. The referencecell area RGX is configured by the reference cells arranged in the rowdirection. The corresponding reference cell is selected by a dummy wordline to allow a reference cell current to flow through its correspondingbit line (configuration shown in FIG. 27). The reference cell area RGYis configured by the reference cells arranged in the column direction(configuration shown in FIG. 29). Each reference cell is coupled to itscorresponding reference bit line and selected by the same word line aseach selected MRAM cell.

At the memory subarray 2, there may be used, as a data read system,either of such configurations that in an open bit line system, referencecells are disposed at two memory subarrays (2 a and 2 b) and that memorycells and reference cells are selected in parallel at one memorysubarray as shown in FIG. 29.

According to the third embodiment of the present invention as describedabove, the reference cells are disposed in the central region lyingwithin the memory subarray. The variations in the resistance value ofeach reference cell from the desired value can be reduced and theaccurate reference current can be generated. Correspondingly, theaccurate reading of data can be carried out (read margin can beenlarged) and high-speed reading can be implemented.

Fourth Embodiment

FIGS. 29(A) and 29(B) are diagrams schematically illustrating aconfiguration of a memory subarray of an MRAM according to a fourthembodiment of the present invention. In FIG. 29(A), the memory subarray2 includes a normal cell area 100 in which normal MRAM cells that storedata therein are disposed, and shape dummy areas 102, 104 and 106disposed at the outer periphery of the normal cell area 100. Shape dummycells provided to maintain the regularity of patterns for the normalMRAM cells and implement accurate patterning and unused for data storageare disposed in the shape dummy areas 102, 104 and 106. Shape dummycells different in structure are respectively disposed in the shapedummy areas 102, 104 and 106. These shape dummy cells are disposed tomaintain the regularity of the patterns for the normal MRAM cells. Thenormal MRAM cells and the shape dummy cells are disposed in line in therow and column directions.

FIG. 29(B) is a diagram schematically showing a sectional structuretaken along a bit line extending direction (column direction: Ydirection), of the memory subarray 2 shown in FIG. 29(A).

In FIG. 29(B), normal MRAM cells MMC that store data therein aredisposed in the normal cell area 100. Each of the normal MRAM cells NMCincludes an active region 110 in which an access transistor is formed, agate word line 112 that configures a word line WL, a fourth metal wiring114 that configures a digit line DL, a local wiring 116 that places avariable magnetoresistive element thereon, and the variablemagnetoresistive element 118 as described in the embodiments mentionedup to now. Data is stored by the direction of magnetization of a freelayer of the variable magnetoresistive element (VR) 118.

A first shape dummy area 102 is disposed along the outer periphery ofthe normal cell area 100. First shape dummy cells FDM identical instructure to the normal MRAM cell NMC are disposed. Namely, the firstshape dummy cell FDM includes an active region 120, a gate wiring 122lying in the same layer as the word line WL, a fourth metal wiring 124of the same wiring layer as the digit line DL, a local wiring 126 of thesame wiring layer as the local wiring 116, and a variablemagnetoresistive element 128 having the same structure as the variablemagnetoresistive element 118.

A second shape dummy area 104 is disposed along the outer periphery ofthe first shape dummy area 102, and a second shape dummy cell SDM isformed therein. The second shape dummy cell SDM includes a local wiring136 included in a local wiring layer LS, and a variable magnetoresistiveelement 138 included in a variable magnetoresistive element layer TMR.The local wiring 136 and the variable magnetoresistive element layer 138have the same structure (pattern) as the local wiring 116 and thevariable magnetoresistive element 118 of the normal MRAM cell NMC.Transistors corresponding to the access transistors are not formed belowthe local wiring 136. A P-type active region 130 and an electrode wiring133 of a first metal wiring layer M1 are provided below the local wiring136. The first metal electrode wiring 133 is coupled to a ground nodeGND and supplies a substrate bias voltage to a P-type well(semiconductor substrate region) of the memory subarray 2 via P-typeactive region 130.

A third shape dummy area 106 is disposed along the outer periphery ofthe second shape dummy area 104, and a third shape dummy cell TDM isformed therein. The third shape dummy cell TDM has a local wiring 146included in the local wiring layer LS, and a variable magnetoresistiveelement 148 included in the variable magnetoresistive element layer TMR.The local wiring 146 and the variable magnetoresistive element 148 havethe same structure/pattern as the local wiring 116 and the variablemagnetoresistive element 118 of the normal MRAM cell NMC.

In the third shape dummy area 106, transistors or wirings of a subarrayperipheral circuit are disposed below the local wiring 146.

The variable magnetoresistive element 118 of the normal MRAM cell NMCand the variable magnetoresistive elements 128, 138 and 148 of the shapedummy cells FDM, SDM and TDM are coupled to their corresponding bitlines BL via upper electrodes.

As shown in FIGS. 29(A) and 29(B), the first shape dummy cells FDM eachhaving the same pattern as the normal MRAM cell are disposed at theouter periphery. Thus, the repetition of patterns in the normal cellarea 100, of the variable magnetoresistive elements VR (118) and theaccess transistors is maintained. The access transistors and variablemagnetoresistive elements of the normal MRAM cells NMC in the normalcell area 100 are patterned accurately.

The second shape dummy cell SDM and the third shape dummy cell TDM arerespectively disposed in the second shape dummy area 104 and the thirdshape dummy area 106. Dummy magnetoresistive elements of the samestructure/pattern as the variable magnetoresistive elements VR of thenormal MRAM cells NMC are disposed in these dummy areas 104 and 106.Transistors each corresponding to the access transistor of the normalMRAM cell NMC are not disposed.

As to the patterning of the access transistors of the normal MRAM cellsin this case, the regularity of the patterns is maintained by the dummyaccess transistors of the first shape dummy cells FDM contained in theinternal first shape dummy area 102, and accurate patterning is hencerealized. The active region at the surface of the substrate region andthe gate word line of the first gate wiring layer 1G are formed withrespect to each access transistor. The wirings included in the secondmetal wiring layer M2 are used for word line piling. Thus, as to thepatterning of each access transistor, the influence of a step betweenlower layers is small, and a shift in patterning is sufficiently ensuredby the dummy transistor of the first shape dummy area.

On the other hand, the variable magnetoresistive elements VR areprovided between the fourth metal wiring layer M4 and the fifth metalwiring layer M5 and formed in the layer above the access transistors.The variable magnetoresistive element is greatly affected by the step inthe bed. In order to suppress variations in the resistancecharacteristics of the variable magnetoresistive element VR, there is aneed to maintain sufficient flatness and set variations in the step assmall as possible at the variable magnetoresistive element. This isbecause the film thickness of the variable magnetoresistive element VRof the normal MRAM cell greatly influences its resistance value and ifthere is a small step since an adjustment to the film thickness is madein a CMP (Chemical Mechanical Polishing) process in particular, itcauses an influence on the film thickness of each layer for the variablemagnetoresistive element of the normal MRAM cell, and a small change inthe film thickness exerts a great influence on the resistance value ofthe variable magnetoresistive element of each normal MRAM cell.Accordingly, the shape dummy variable magnetoresistive elements largerin number than the shape dummy transistors for the access transistorsare provided, and a step in the magnetoresistive element layer TMR atthe peripheral portion of the normal cell area 100 can be set as smallas possible.

The second shape dummy area 104 does not particularly need to disposethe dummy access transistors for having the regularity of the patternsfor the access transistors. Thus, the active region 130 for applying asubstrate bias and the first metal wiring 133 included in the firstmetal wiring layer M1 are disposed in the second shape dummy area 104.Consequently, there is no need to additionally provide the region forapplying the substrate bias. Further, an increase in the layout area ofthe memory subarray 2 can be suppressed.

Also at the third shape dummy area 106, the third shape dummy cell TDMdoes not need to provide the dummy access transistors for maintainingthe pattering of the access transistors below the local wiring 146. Aperipheral transistor layout area 140 is provided in this area.Transistors and wirings for a peripheral circuit are disposed in theperipheral transistor layout area 140. Thus, even if many shape dummyvariable magnetoresistive elements are disposed to maintain theregularity of patterning of the variable magnetoresistive elements VR ofthe normal MRAM cells, components of other circuits are disposed in theshape dummy cell area to enable an improvement in the use efficiency inareas. Correspondingly, an increase in the layout area of the memorycell array due to the layout of the shape dummy cells can be suppressed.It is thus possible to reduce variations in the resistancecharacteristics of the variable magnetoresistive element of each normalMRAM cell while suppressing an increase in the area of the memorysubarray.

Incidentally, the number of the first shape dummy cells FDM disposed inthe second shape dummy area 102, and the number of the second shapedummy cell SDM and the third shape dummy cell TDM are respectivelydefined to a suitable number in consideration of respective ranges formaintaining the regularity of patterning of the access transistors ofthe normal MRAM cell and maintaining the regularity of patterning of thevariable magnetoresistive elements VR.

Incidentally, the shape dummy cells FDM, SDM and TDM shown in FIG. 29(B)are disposed similarly at the memory subarray 2 also in the rowdirection.

A drive end of the bit line BL is provided outside the third shape dummyarea. The corresponding bit line is driven by an unillustrated drivecircuit. This is done because the variable magnetoresistive element ofthe third shape dummy cell is disposed in the layer above the peripheralcircuit transistor to thereby avoid the collision between its upperlayer wiring and the wiring for drive.

As shown in FIG. 29(B) as above, the shape dummy cells are respectivelyformed using the first gate wiring 1G to the first through fifth metalwiring layers M1 through M5 and the layer wirings of the local wiringlayer LS. Therefore, the regularity of the patterns for the normal MRAMcells contained in the normal cell area 100 can be maintainedsufficiently and their steps can be reduced sufficiently. Further,variations in the shape/film thickness due to the step or the likebetween the variable magnetoresistive elements can be reduced, andvariations in their initial resistance values can be suppressedsufficiently.

FIG. 30 is a diagram schematically showing a configuration of a biasapplication section of the second shape dummy area 104 shown in FIG.29(B). In FIG. 30, the memory subarray 2 is formed in a P well(substrate region) 152 lying over a semiconductor substrate 150. N-typeimpurity regions 160 and 162 that configure access transistors ATR, andgate wirings 164 are provided at the surface of the P well 152. Theseaccess transistors ATR are separated from one another by unillustrateddevice isolation films (e.g., shallow trench isolation films). Since thegate wirings 164 configure word lines for the dummy access transistorsand the normal MRAM cells, reference numerals 164 are used in FIG. 30.The drain and source impurity regions 160 and 162 are also similar.

The first shape dummy area 102 and the normal cell area 100 are disposedin the memory cell area 165.

A P-type impurity region 130 is provided in the second shape dummy area106 as an active region 130. The P-type impurity region (active region)130 is coupled to a ground node GND by its corresponding first metalwiring 133. The P-type well 152 is maintained at a ground voltage levelby the wiring 133 and the active region 130, thereby achievingstabilization of a threshold voltage of each access transistor and areduction in backgate bias effect.

As shown in FIG. 30, the impurity region 130 for applying a substratebias and the first metal wiring 133 that configures a bias voltagetransfer line are disposed to overlap with variable magnetoresistiveelements (136, 138 and 145) of their upper shape dummy cell as viewed ona plane basis. Thus, there is no need to provide the region forapplication of the substrate bias additionally, and an increase in thelayout area of the memory subarray 2 can be suppressed.

Incidentally, the second shape dummy area 104 is disposed at the outerperiphery of the first shape dummy area 102 in FIG. 30. Thus, theimpurity regions (active regions) 130 each used to apply the substratebias may respectively be disposed at the ends in the row and columndirections, of the memory subarray 2.

FIG. 31 is a diagram schematically showing a layout of the third shapedummy area 106 shown in FIGS. 29(A) and 29(B) and its peripheral normalcircuits. In FIG. 31, the memory subarray 2 includes a normal cell area100 located in the center thereof, its peripheral shape dummy areas 102and 104, and a third shape dummy area 106 provided at its outerperiphery. The third shape dummy area 106 is divided into four sub-areas106 a, 106 b, 106 c and 106 d along the four sides of the memorysubarray 2.

At the periphery of the memory subarray 2, bit line drive circuits 200 aand 200 b are disposed on both sides of a bit line BL as the peripheralcircuits. Digit line drive circuits 202 a and 202 b are disposed atopposite both ends of a digit line DL. Column decoders 210 a through 210d are respectively disposed corresponding to the four corners of thememory subarray 2.

At the bit line drive circuits 200 a and 200 b, bit line driverscorresponding to the bit line drivers (BL drivers) BDVE and BDVW shownin FIG. 3 previously are disposed corresponding to the respective bitlines BL. The bit line drive circuits 200 a and 200 b are disposed so asto overlap with the third shape dummy sub-areas 106 a and 106 c partly.Transistors that receive a column selection signal and write datatherein and receive a control signal therein are disposed in the thirdshape dummy sub-areas 106 a and 106 c. The drive transistors for drivingthe bit lines BL according to the write data are disposed in theircorresponding areas lying outside the third shape dummy sub-areas 106 aand 106 c. The drive transistors for the bit line drivers are coupled totheir corresponding outermost ends 205 a and 205 b of the bit lines BL.Thus, portions for coupling the bit line BL and the bit line drivetransistors can be laid out without being affected by the layout regionsof their upper dummy variable magnetoresistive elements.

The digit line drive circuits 202 a and 202 b are also disposed in sucha manner that their partial regions overlap with the shape dummysub-areas 106 b and 106 d. Digit line drivers are respectively disposedalso in the digit line drive circuits 202 b and 202 a and drive thecorresponding digit line DL in accordance with a row selection signaland a timing signal. The digit line DL is of a wiring layer lying in alayer below the local wiring 136. The digit line DL does notparticularly need to be driven by its coupling ends 207 a and 207 b inthe areas lying outside the sub-areas 106 b and 106 d in particular.Displaying digit line drive transistors outside these shape dummysub-areas 106 b and 106 d makes it possible to dispose relatively largedrive transistors (they do not need to be sensitive to the sizes of theupper dummy shape variable magnetoresistive elements).

Incidentally, the digit line drivers for the digit line drive circuits202 a and 202 b are shown in FIG. 31 so as to be disposed at both endsof the digit lines DL in association with the digit lines DL. However,each of the digit lines DL merely needs to allow the current to flow ina predetermined direction upon data writing regardless of the logicalvalues of write data. Such a configuration that one end of the digitline DL is always coupled to, for example, a power node and the otherend thereof is coupled to a ground node by its corresponding digit linedrive transistor may be utilized. In this case, the digit line drivecircuit is provided on one side of the digit line DL.

As an alternative to it, the digit line drive circuit 202 (202 a or 202b) may be provided on one end side of the digit line DL, and the wordline drive circuits for driving the corresponding word line may bedisposed on the opposite ends. The word line drivers (WL drivers WDW andWDE of FIG. 3) contained in the word line drive circuits merely need todrive the second metal wiring. The drive transistors of the word linedrivers may be disposed within the sub-area 106 b or 106 d (because thecollision between the wiring for the upper variable magnetoresistiveelement and the wiring for the word line drive transistor do not occur).

Incidentally, column selection signals from the column decoders 210 athrough 210 d are supplied to their corresponding bit line driverscontained in the bit line drive circuits 200 a and 200 b upon datawriting. Upon data reading, they are supplied to their correspondingread column selection gates.

According to the fourth embodiment of the present invention as describedabove, the shape dummy areas are provided at the memory subarray. Theshaped dummy areas in which the dummy elements for the variablemagnetoresistive elements are disposed, are disposed outside the dummyshape areas in which the dummy cells each having the same structure asthe normal MRAM cell are disposed. Thus, the patterning of the variablemagnetoresistive elements for the normal MRAM cells can be performedaccurately, and the peripheral circuits can be disposed so as to overlapas viewed on the plane basis within the shape dummy areas, therebymaking it possible to suppress increases in the layout region of eachperipheral circuit and the area of the memory subarray.

Incidentally, as a mode for laying out the normal MRAS cells in theconfiguration in which the shape dummy cells are disposed, either of anopen bit line configuration (refer to the first embodiment) and apseudo-folded bit line configuration (MRAM cell and dummy reference cellare selected in parallel within the same memory subarray) may beapplied.

In the above configuration, the MRAM cells which perform the writing ofdata using a current-induced magnetic field, like the TMR element or MTJelement, are shown as the variable magnetoresistive elements. As theMRAM cell, however, a spin injection type MRAM cell for setting thedirection of magnetization of a free layer for each variablemagnetoresistive element by a spin deflection current may be used. Inthe case of the spin injection type MRAM, however, there is a need toprovide mesh structures of source lines in separate form individuallyevery area (IO blocks) for input/output data bits. This is because whena write current is supplied in the case of the spin injection type MRAM,the direction of the current is set between the bit line and the sourceline in accordance with the logical value of write data and thereby thecurrent is caused to flow.

An MRAM according to the present invention may be applied to a built-inMRAM application that configures a system with being formed over thesame semiconductor substrate together with another processor or thelike. The MRAM alone may be utilized. In either case, an MRAM can berealized which is reduced in layout area and capable of performing dataaccess at high speed and accurately.

Incidentally, in the first through fourth embodiments, the respectiveembodiments may be used in combination suitably. The respectiveembodiments may be applied individually.

1. A magnetic memory device comprising: a plurality of MRAM cellsarranged in matrix form and each having a series body of a variablemagnetoresistive element and a selection transistor; a plurality of wordlines disposed corresponding to respective rows of the MRAM cells andcoupled with gates of the selection transistors of the MRAM cells of thecorresponding rows respectively; and a plurality of piling wiringsprovided corresponding to the word lines and electrically coupled to thecorresponding word lines at predetermined intervals, wherein at each ofthe MRAM cells, the selection transistor has first and second impurityregions disposed opposite to each other, wherein the corresponding wordlines are disposed so as to cross between the first and second impurityregions along a row direction to thereby configure the gates, whereinthe first impurity regions are disposed in separated form every MRAMcells along the row direction and electrically coupled to theircorresponding variable magnetoresistive elements, wherein each of theMRAM cells has first and second adjacent MRAM cells adjacent in thedirections opposite to each other in the row direction, and wherein afirst distance L1 in the row direction to each of the first impurityregions of the MRAM cell and the first adjacent MRAM cell is longer thana second distance L2 extending along the row direction to each of thefirst impurity regions of the MRAM cell and the second adjacent MRAMcell.
 2. The magnetic memory device according to claim 1, wherein at therespective MRAM cell rows, the second impurity regions continuouslyextend in the row direction and thereby form common source regions withrespect to the selection transistors of the MRAM cells of thecorresponding rows respectively, and wherein the magnetic memory devicefurther comprises source piling wirings which are disposed in regionsbetween the first impurity regions each having the second distance L2 inassociation with columns of the MRAM cells so as to extend continuouslyin a column direction and which are respectively electrically coupled tothe second impurity regions in regions which intersect with the secondimpurity regions.
 3. The magnetic memory device according to claim 2,wherein a relationship of distances extending along the row directionbetween contacts for providing electrical coupling between the firstimpurity regions and the corresponding variable magnetoresistiveelements is set to a relationship opposite to a relationship of thefirst and second distances L1 and L2 extending along the row directionbetween the first impurity regions among transfer MRAM cells.
 4. Themagnetic memory device according to claim 1, wherein each of the wordlines has a protrusion which extends to a boundary region of each MRAMcell column in a region between the first impurity regions each havingthe first distance L1, and wherein contacts for providing electricalcoupling between the word line piling wirings and their correspondingword lines are formed at MRAM cell column boundary portions of theprotrusions.
 5. The magnetic memory device according to claim 4, whereinthe protrusions are formed so as to extend in an opposite directionevery the MRAM cells and formed at positions different in the rowdirection at the adjacent rows.
 6. The magnetic memory device accordingto claim 1, further comprising source piling wirings disposed in regionsbetween the first impurity regions each having the second distance L2 inassociation with the MRAM cell columns so as to extend continuously inthe column direction, wherein at the respective MRAM cell rows, thesecond impurity regions continuously extend in the row direction andthereby form common source regions with respect to the selectiontransistors of the MRAM cells of the corresponding rows respectively,wherein the source piling wirings are respectively electrically coupledto the second impurity regions in regions which intersect with thesecond impurity regions, wherein each of the word lines has a protrusionof the same wiring layer as the source piling wiring, extending to aboundary region of each MRAM cell column in a region between the firstimpurity regions each having the first distance L1, and wherein contactsfor providing electrical coupling between the word line piling wiringsand their corresponding word lines are formed at MRAM cell columnboundary portions of the protrusions respectively.
 7. The magneticmemory device according to claim 1, wherein wirings for coupling thefirst impurity regions and their corresponding variable magnetoresistiveelements respectively have the same pattern at the memory cells of eachadjacent row.
 8. A magnetic memory device comprising: a memory array inwhich a plurality of MRAM cells arranged in matrix form and each havinga series body of a variable magnetoresistive element and a selectiontransistor are disposed; a plurality of word lines disposedcorresponding to rows of the MRAM cells and coupled with gates of theselection transistors of the MRAM cells of the corresponding rowsrespectively; a plurality of bit lines disposed corresponding to columnsof the MRAM cells and respectively coupled to the selection transistorsof the MRAM cells of the corresponding columns; and a shape dummy cellarea disposed around the memory array and provided with a plurality ofshape dummy cells each of which at least has an element of the sameshape as the variable magnetoresistive element of the MRAM cell andwhich are disposed in alignment with the MRAM cells, wherein the shapedummy cell area has a first shape dummy area in which each first shapedummy cell of the same structure as the MRAM cell, having a variablemagnetoresistive element and a selection transistor is disposed, asecond shape dummy area which is disposed at an outer periphery of thefirst shape dummy area and in which a second shape dummy cell having adummy magnetoresistive element of the same structure as the variablemagnetoresistive element of the MRAM cell is disposed, and a third shapedummy area which is disposed at an outer periphery of the second shapedummy area and in which a third shape dummy cell having a dummymagnetoresistive element of the same structure as the variablemagnetoresistive element is disposed, wherein at the second shape dummyarea, an element for applying a bias voltage to a substrate region ofthe memory array is disposed in a region below the dummymagnetoresistive element, and wherein at the third shape dummy area, atransistor of a peripheral circuit for obtaining access to the memoryarray is disposed in a lower region of the dummy magnetoresistiveelement.
 9. A magnetic memory device comprising: a memory array in whicha plurality of MRAM cells arranged in matrix form and each having aseries body of a variable magnetoresistive element and a selectiontransistor are disposed; a plurality of word lines disposedcorresponding to rows of the MRAM cells and coupled with gates of theselection transistors of the MRAM cells of the corresponding rowsrespectively; a plurality of bit lines disposed corresponding to columnsof the MRAM cells and respectively coupled to the selection transistorsof the MRAM cells of the corresponding columns; a plurality of referencecells which are disposed in a central part of the memory array inalignment with the MRAM cells and respectively store fixed value datatherein; and a sense amplifier circuit which reads stored data of eachselected MRAM cell of the MRAM cells by referring to the stored data ofthe reference cells upon data reading.